NCP4304A, NCP4304B
www.onsemi.com
4
MAXIMUM RATINGS
Symbol Rating Value Unit
V
CC
IC Supply Voltage −0.3 to 30 V
V
DRV
Driver Output Voltage −0.3 to 17 V
V
CS
Current Sense Input dc Voltage −4 to 200 V
V
Csdyn
Current Sense Input Dynamic Voltage (t
pw
= 200 ns) −10 to 200 V
V
TRIG/DIS
Trigger Input Voltage −0.3 to 10 V
V
MIN_TON
, V
MIN_TOFF
MIN_TON and MIN_TOFF Input Voltage −0.3 to 10 V
I
MIN_TON
, I
MIN_TOFF
MIN_TON and MIN_TOFF Current −10 to +10 mA
V
COMP
Static Voltage Difference between COMP and GND Pins (Internally Clamped) −3 to 10 V
V
COMP_dyn
Dynamic Voltage Difference between COMP and GND Pins (t
pw
= 200 ns) −10 to 10 V
I
COMP
Current into COMP Pin −5 to 5 mA
R
q
JA
Thermal Resistance Junction-to-Air, SOIC − A/B Versions 180 °C/W
R
q
JA
Thermal Resistance Junction-to-Air, DFN − A/B Versions, 50 mm
2
− 1.0 oz. Copper
Spreader
180 °C/W
R
q
JA
Thermal Resistance Junction-to-Air, DFN − A/B Versions, 600 mm
2
− 1.0 oz. Copper
Spreader
80 °C/W
T
Jmax
Maximum Junction Temperature 150 °C
T
Smax
Storage Temperature Range −60 to +150 °C
T
Lmax
Lead Temperature (Soldering, 10 s) 300 °C
ESD Capability, Human Body Model except Pin V
CS
– Pin 5, HBM ESD Capability on
Pin 5 is 650 V per JEDEC Standard JESD22−A114E
2 kV
ESD Capability, Machine Model per JEDEC Standard JESD22−A115−A 200 V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. This device meets latchup tests defined by JEDEC Standard JESD78.
ELECTRICAL CHARACTERISTICS
(For typical values T
J
= 25°C, for min/max values T
J
= −40°C to +125°C, V
CC
= 12 V, C
DRV
= 0 nF, R
MIN_TON
= R
MIN_TOFF
= 10 kW,
V
TRIG/DIS
= 0 V, f
CS
= 100 kHz, DC
CS
= 50%, V
CS_high
= 4 V, V
CS_low
= −1 V unless otherwise noted)
Symbol
Rating Pin Min Typ Max Unit
SUPPLY SECTION
V
CC_on
Turn-on threshold level (V
CC
going up) 1 9.3 9.9 10.5 V
V
CC_off
Minimum operating voltage after turn-on (V
CC
going down) 1
8.3
8.9 9.5 V
V
CC_hyste
V
CC
hysteresis 1 0.6 1.0 1.4 V
I
CC1
_
A
I
CC1
_
B
Internal IC consumption (no output load on pin 8, f
SW
= 500 kHz,
t
on_min
= 500 ns, t
off_min
= 620 ns)
1 −
−
4.5
4.0
6.6
6.2
mA
I
CC2_A
I
CC2_B
Internal IC consumption (C
DRV
= 1 nF on pin 8, f
SW
= 400 kHz,
t
on_min
= 500 ns, t
off_min
= 620 ns)
1 −
−
9.0
6.5
12
9
mA
I
CC3_A
I
CC3_B
Internal IC consumption (C
DRV
= 10 nF on pin 8, f
SW
= 400 kHz,
t
on_min
= 500 ns, t
off_min
= 620 ns)
1 −
−
57.0
35.0
80
65
mA
I
CC_StartUp
Startup current consumption (V
CC
= V
CC_on
− 0.1 V, no switching at
CS pin)
1 − 35 75
mA
I
CC_Disable_1
Current consumption during disable mode (No switching at CS pin,
V
TRIG/DIS
= 5 V)
1 − 45 90
mA
I
CC_Disable_2
Current consumption during disable mode (CS pin is switching,
f
SW
= 500 kHz, V
CS_high
= 4 V, V
CS_low
=−1 V, V
TRIG/DIS
= 5 V)
1 − 200 330
mA
DRIVE OUTPUT
t
r_A
Output voltage rise-time for A version (C
DRV
= 10 nF) 8 − 120 − ns
t
r_B
Output voltage rise-time for B version (C
DRV
= 10 nF) 8 − 80 − ns
t
f_A
Output voltage fall-time for A version (C
DRV
= 10 nF) 8 − 50 − ns
t
f_B
Output voltage fall-time for B version (C
DRV
= 10 nF) 8 − 35 − ns
R
oh
Driver source resistance (Note 1) 8 − 1.8 7
W
R
ol
Driver sink resistance 8 − 1 2
W
