MT9HTF6472KY-667B3 Datasheet MT9HTF12872KY-40EA1, MT9HTF12872KY-40ED1, MT9HTF12872KY-53EA1 | P1-P3

Products and specifications discussed herein are subject to change by Micron without notice.

256MB, 512MB, 1GB: (x72, SR) 244-Pin DDR2 Registered MiniDIMM

Features

PDF: 09005aef817ab1fc/Source: 09005aef817ab1dd Micron Technology, Inc., reserves the right to change products or specifications without notice.

HTF9C32_64_128x72K.fm - Rev. C 9/06 EN

DDR2 SDRAM Registered MiniDIMM

MT9HTF3272(P)K – 256MB

MT9HTF6472(P)K – 512MB

MT9HTF12872(P)K – 1GB

For component specifications, refer to Micron’s Web site: www.micron.com/products/dram/ddr2

Features

• 244-pin, mini dual in-line memory module

(MiniDIMM)

• Fast data transfer rates: PC2-3200, PC2-4200, or

PC2-5300

• Supports ECC error detection and correction

• 256MB (32 Meg x 72), 512MB (64 Meg x 72),

1GB (128 Meg x 72)

•V

DD = VDDQ = +1.8V

•V

DDSPD = +1.7V to +3.6V

• JEDEC standard 1.8V I/O (SSTL_18 compatible)

• Differential data strobe (DQS, DQS#) option

• Four-bit prefetch architecture

• DLL to align DQ and DQS transitions with CK

• Multiple internal device banks for concurrent

operation

• Supports duplicate output strobe (RDQS/RDQS#)

• Programmable CAS# latency (CL)

• Posted CAS# additive latency (AL)

• WRITE latency = READ latency - 1

• Programmable burst lengths: 4 or 8

• Adjustable data-output drive strength

• 64ms, 8,192-cycle refresh

• On-die termination (ODT)

• Serial presence-detect (SPD) with EEPROM

• Gold edge contacts

• Single rank

Figure 8: 244-Pin DIMM (MO-244 R/C “A”)

Notes: 1. CL = CAS (READ) latency; registered mode

will add one clock cycle to CL.

2. Not available in 256MB density.

Options Marking

•Parity P

•Package

244-pin DIMM (lead-free) Y

• Frequency/CAS latency

2.5ns @ CL = 5 (DDR2-800)

-80E

2.5ns @ CL = 6 (DDR2-800)

-800

3ns @ CL = 5 (DDR2-667) -667

3.75ns @ CL = 4 (DDR2-533) -53E

5.0ns @ CL = 3 (DDR2-400) -40E

•PCB height

30mm (1.18in)

Height 30mm (1.18 in)

Table 1: Address Table

256MB 512MB 1GB

Refresh count

8K 8K 8K

Row addressing

8K (A0–A12) 16K (A0–A13) 16K (A0–A13)

Device bank addressing

4 (BA0, BA1) 4 (BA0, BA1) 8 (BA0, BA1, BA2)

Device page size per bank

1KB 1KB 1KB

Device configuration

256Mb (32 Meg x 8) 512Mb (64 Meg x 8) 1Gb (128 Meg x 8)

Column addressing

1K (A0–A9) 1K (A0–A9) 1K (A0–A9)

Module rank addressing

1 (S0#) 1 (S0#) 1 (S0#)

PDF: 09005aef817ab1fc/Source: 09005aef817ab1dd Micron Technology, Inc., reserves the right to change products or specifications without notice.

HTF9C32_64_128x72K.fm - Rev. C 9/06 EN

256MB, 512MB, 1GB: (x72, SR) 244-Pin DDR2 Registered MiniDIMM

Features

Notes: 1. All part numbers end with a two-place code (not shown), designating component and PCB

revisions. Consult factory for current revision codes. Example: MT9HTF6472KY-40EC2.

2. For component data sheets, refer to Micron’s web site at www.micron.com/products/dram/

ddr2.

Table 2: Key Timing Parameters

Speed

Grade

Industry

Nomenclature

Data Rate (MT/s)

RCD

(ns)

(ns)CL = 6 CL = 5 CL = 4 CL = 3

-80E PC2-6400 – 800 533 – 12.5 12.5 55

-800 PC2-6400 800 667 – – 15 15 55

-667 PC2-5300 – 667 533 400 15 15 55

-53E PC2-4200 – – 533 400 15 15 55

-40E PC2-3200 – – 400 400 15 15 55

Table 3: Part Numbers and Timing Parameters – 256MB

Base device: MT47H32M8, 256Mb DDR2 SDRAM

Part Number

Module

Density Configuration

Module

Bandwidth

Memory Clock/

Data Rate

Latency

(CL -

RCD -

RP)

MT9HTF3272(P)KY-667__

256MB 32 Meg x 72 5.3 GB/s 3.0ns/667 MT/s 5-5-5

MT9HTF3272(P)KY-53E__

256MB 32 Meg x 72 4.3 GB/s 3.75ns/533 MT/s 4-4-4

MT9HTF3272(P)KY-40E__

256MB 32 Meg x 72 3.2 GB/s 5.0ns/400 MT/s 3-3-3

Table 4: Part Numbers and Timing Parameters – 512MB

Base device: MT47H64M8, 512Mb DDR2 SDRAM

Part Number

Module

Density Configuration

Module

Bandwidth

Memory Clock/

Data Rate

Latency

(CL -

RCD -

RP)

MT9HTF6472(P)KY-80E__

512MB 64 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 5-5-5

MT9HTF6472(P)KY-800

512MB 64 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 6-6-6

MT9HTF6472(P)KY-667__

512MB 64 Meg x 72 5.3 GB/s 3.0ns/667 MT/s 5-5-5

MT9HTF6472(P)KY-53E__

512MB 64 Meg x 72 4.3 GB/s 3.75ns/533 MT/s 4-4-4

MT9HTF6472(P)KY-40E__

512MB 64 Meg x 72 3.2 GB/s 5.0ns/400 MT/s 3-3-3

Table 5: Part Numbers and Timing Parameters – 1GB

Base device: MT47H128M8, 1Gb DDR2 SDRAM

Part Number

Module

Density Configuration

Module

Bandwidth

Memory Clock/

Data Rate

Latency

(CL -

RCD -

RP)

MT9HTF12872(P)KY-80E__

1GB 128 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 5-5-5

MT9HTF12872(P)KY-800__

1GB 128 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 6-6-6

MT9HTF12872(P)KY-667__

1GB 128 Meg x 72 5.3 GB/s 3.0ns/667 MT/s 5-5-5

MT9HTF12872(P)KY-53E__

1GB 128 Meg x 72 4.3 GB/s 3.75ns/533 MT/s 4-4-4

MT9HTF12872(P)KY-40E__

1GB 128 Meg x 72 3.2 GB/s 5.0ns/400 MT/s 3-3-3

PDF: 09005aef817ab1fc/Source: 09005aef817ab1dd Micron Technology, Inc., reserves the right to change products or specifications without notice.

HTF9C32_64_128x72K.fm - Rev. C 9/06 EN

256MB, 512MB, 1GB: (x72, SR) 244-Pin DDR2 Registered MiniDIMM

Pin Assignments and Descriptions

Notes: 1. Pin 55 is NC for 256MB and 512MB, and BA2 for 1GB.

2. Pin 199 is NC for 256MB, and A13 for 512MB and 1GB.

Table 6: Pin Assignments

244-Pin MiniDIMM Front 244-Pin MiniDIMM Back

Pin Symbol Pin Symbol Pin Symbol Pin Symbol

1VREF 32 VSS 63 VDDQ94DQS5# 123 VSS 154 DQ28 185 A3 216 NC/

RDQS#5

SS 33 DQ24 64 A2 95 DQS5 124 DQ4 155 DQ29 186 A1 217 VSS

3DQ034 DQ25 65 VDD 96 VSS 125 DQ5 156 VSS 187 VDD 218 DQ46

4DQ135V

SS 66 VSS 97 DQ42 126 VSS 157 DM3/

RDQS3

188 CK0 219 DQ47

5VSS 36 DQS3# 67 VSS 98 DQ43 127 DM0/

RDQS0

158 NC/

RDQS#3

189CK0#220 VSS

6 DQS0# 37 DQS3 68 PAR_IN 99 VSS 128 NC/

RDQS#0

159 VSS 190 VDD 221 DQ52

7DQS038 VSS 69 VDD 100 DQ48 129 VSS 160 DQ30 191 A0 222 DQ53

SS 39 DQ26 70 A10/AP 101 DQ49 130 DQ6 161 DQ31 192 BA1 223 VSS

9 DQ2 40 DQ27 71 BA0 102 VSS 131 DQ7 162 VSS 193 VDD 224 RFU

10 DQ3 41 V

SS 72 VDD 103 SA2 132 VSS 163 CB4 194RAS#225 RFU

11 VSS 42 CB0 73 WE# 104 NC (Test) 133 DQ12 164 CB5 195 VDDQ226 VSS

12 DQ8 43 CB1 74 VDDQ105 Vss 134 DQ13 165 VSS 196 S0# 227 DM6/

RDQS6

13 DQ9 44 VSS 75 CAS# 106 DQS6# 135 VSS 166 DM8/

RDQS8

197 VDDQ228 NC/

RDQS#6

14 VSS 45 DQS8# 76 VDDQ 107 DQS6 136 DM1/

RDQS1

167 NC/

RDQS#8

198 ODT0 229 VSS

15 DQS1# 46 DQS8 77 NC 108 VSS 137 NC/

RDQS#1

168 VSS 199 NC/A13 230 DQ54

16 DQS1 47 VSS 78 NC 109 DQ50 138 VSS 169 CB6 200 VDD 231 DQ55

17 Vss 48 CB2 79 V

DDQ 110 DQ51 139 RFU 170 CB7 201 NC 232 VSS

18 RESET# 49 CB3 80 NC 111 VSS 140 RFU 171 VSS 202 VSS 233 DQ60

19 NC 50 V

SS 81 VSS 112 DQ56 141 VSS 172 NC 203 DQ36 234 DQ61

20 VSS 51 NC 82 DQ32 113 DQ57 142 DQ14 173 VDDQ 204 DQ37 235 VSS

21 DQ10 52 VDDQ 83 DQ33 114 VSS 143 DQ15 174 NC/CKE1 205 VSS 236 DM7/

RDQS7

22 DQ11 53 CKE0 84 V

SS 115 DQS7# 144 VSS 175 VDD 206 DM4/

RDQS4

237 NC/

RDQS#7

23 V

SS 54 VDD 85 DQS4# 116 DQS7 145 DQ20 176 NC 207 NC/

RDQS#4

238 VSS

24 DQ16 55 NC/BA2 86 DQS4 117 VSS 146 DQ21 177 NC 208 VSS 239 DQ62

25 DQ17 56 E

RR_OUT 87 VSS 118 DQ58 147 VSS 178 VDDQ 209 DQ38 240 DQ63

26 V

SS 57 VDDQ 88 DQ34 119 DQ59 148 DM2/

RDQS2

179 A12 210 DQ39 241 VSS

27 DQS2# 58 A11 89 DQ35 120 VSS 149 NC/

RDQS#2

180A9211VSS 242 SDA

28 DQS2 59 A7 90 V

SS 121 SA0 150 VSS 181 VDD 212 DQ44 243 SCL

29 V

SS 60 VDD 91 DQ40 122 SA1 151 DQ22 182 A8 213 DQ45 244 VDDSPD

30 DQ18 61 A5 92 DQ41 152 DQ23 183 A6 214 VSS

31 DQ19 62 A4 93 VSS 153 VSS 184 VDDQ 215 DM5/

RDQS5

P1-P3 P4-P6 P7-P9 P10-P12 P13-P15 P16-P18

MT9HTF6472KY-667B3

Mfr. #:

Buy MT9HTF6472KY-667B3

Manufacturer:

Micron

Description:

MOD DDR2 SDRAM 512MB 244MRDIMM

Lifecycle:

New from this manufacturer.

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MT9HTF6472KY-667B3

MT9HTF6472KY-667B3

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