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MT9HTF6472KY-667B3

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18
PDF: 09005aef817ab1fc/Source: 09005aef817ab1dd Micron Technology, Inc., reserves the right to change products or specifications without notice.
HTF9C32_64_128x72K.fm - Rev. C 9/06 EN
16 ©2005 Micron Technology, Inc. All rights reserved.
256MB, 512MB, 1GB: (x72, SR) 244-Pin DDR2 Registered MiniDIMM
Register and PLL Specifications
24
SDRAM access from CK,
t
AC,
MAX CL - 1
-80E/-800
-667
-53E
-40E
–
45
50
60
40
45
50
60
40
45
50
60
25
SDRAM cycle time,
t
CK,
MAX CL - 2
-80E/-800
-667
-53E/-40E(N/A)
–
50
00
00
50
00
00
50
00
26
SDRAM access from CK,
t
AC,
MAX CL - 2
-80E/-800
-667
-53E/-40E(N/A)
–
45
00
00
45
00
00
45
00
27
Minimum row precharge time,
t
RP
-80E
-800/-667/-53E/
-40E
–
–/3C
32
3C
32
3C
28
Minimum row active-to-row
active,
t
RRD
1E 1E 1E
29
Minimum RAS#-to-CAS# delay,
t
RCD
-80E
-800/-667/-53E/
-40E
–
–/3C
32
3C
32
3C
30
Minimum RAS# pulse width,
t
RAS
-80E/-800/
-667/-53E
-40E
2D
2D
28
2D
2D
28
2D
2D
28
31
Module rank density
256MB, 512MB
1GB
40 80 01
32
Address and command setup
time,
t
IS
b
-80E/-800
-667
-53E
-40E
–
20
25
35
17
20
25
35
17
20
25
35
33
Address and command hold time,
t
IH
b
-80E/-800
-667
-53E
-40E
–
27
37
47
25
27
37
47
25
27
37
47
34
Data/ Data mask input setup time,
t
DS
b
-80E/-800
-667/-53E
-40E
–
10
15
5
10
15
5
10
15
35
Data/ Data mask input hold time,
t
DH
b
-80E/-800
-667
-53E
-40E
–
17
22
27
12
17
22
27
12
35
22
27
36
Write recovery time,
t
WR
3C 3C 3C
37
WRITE-to-READ command delay,
t
WTR
-80E
-800/-40E
-667/-53E
–
28
1E
1E
28
1E
28
28
1E
38
READ-to-PRECHARGE command
delay,
t
RTP
1E 1E 1E
39
Memory analysis probe
00 00 00
40
Extension for bytes 41 and 42
-80E
-800
-667/-53E/-40E
–
–
00
30
00
00
06
06
06
Table 18: Serial Presence-Detect Matrix
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”; table notes located on page 17
Byte Description
Entry
(Version)
MT9HTF3272K/
MT9HTF3272(P)K
MT9HTF6472K/
MT9HTF6472(P)K
MT9HTF12872K/
MT9HTF12872K(P)K
PDF: 09005aef817ab1fc/Source: 09005aef817ab1dd Micron Technology, Inc., reserves the right to change products or specifications without notice.
HTF9C32_64_128x72K.fm - Rev. C 9/06 EN
17 ©2005 Micron Technology, Inc. All rights reserved.
256MB, 512MB, 1GB: (x72, SR) 244-Pin DDR2 Registered MiniDIMM
Register and PLL Specifications
Notes: 1. The
t
RC SPD values shown are JEDEC DDR2 device specification values. The actual Micron
DDR2 device specification is
t
RC = 55nsfor all speed grades.
41
MIN active auto refresh time,
t
RC
(see note 1)
-80E
-800/-667/-53E
-40E
39
3C
37
39
3C
37
3C
3C
37
42
Minimum AUTO REFRESH to
ACTIVE/AUTO REFRESH command
period,
t
RFC
4B 69 7F
43
SDRAM device MAX cycle time,
t
CK (MAX)
80 80 80
44
SDRAM device MAX DQS–DQ
skew time,
t
DQSQ
-80E/-800
-667
-53E
-40E
–
18
1E
23
14
18
1E
23
14
18
1E
23
45
SDRAM device MAX read data
hold skew factor,
t
QHS
-80E/-800
-667
-53E
-40E
–
22
28
2D
1E
22
28
2D
1E
22
28
2D
46
PLL relock time
0F 0F 0F
47–61
Optional features, not supported
00 00 00
62
SPD revision
Release 1.2 12 12 12
63
Checksum for bytes 0–62
ECC/ECC and parity
-80E
-800
-667
-53E
-40E
–
–
1F/23
CA/CE
31/35
C6
DA
7E/82
29/2D
90/94
7B
7B
1F/23
CA/CE
31/35
64
Manufacturer’s JEDEC ID code
MICRON 2C 2C 2C
65–71
Manufacturer’s JEDEC ID code
(Continued) FF FF FF
72
Manufacturing location
01–12 01–0C 01–0C 01–0C
73–90
Module part number (ASCII)
Variable data Variable data Variable data
91
PCB identification code
1–9 01–09 01–09 01–09
92
Identification code (continued)
000 00 00
93
Year of manufacture in BCD
Variable data Variable data Variable data
94
Week of manufacture in BCD
Variable data Variable data Variable data
95–98
Module serial number
Variable data Variable data Variable data
99–127
Manufacturer-specific data
(RSVD)
00 00 00
128–
255
Customer reserved
FF FF FF
Table 18: Serial Presence-Detect Matrix
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”; table notes located on page 17
Byte Description
Entry
(Version)
MT9HTF3272K/
MT9HTF3272(P)K
MT9HTF6472K/
MT9HTF6472(P)K
MT9HTF12872K/
MT9HTF12872K(P)K
®
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900
prodmktg@micron.com www.micron.com Customer Comment Line: 800-932-4992
Micron, the M logo, and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of
their respective owners.
This data sheet contains minimum and maximum limits specified over the complete power supply and temperature range
for production devices. Although considered final, these specifications are subject to change, as further product
development and data characterization sometimes occur.
PDF: 09005aef817ab1fc/Source: 09005aef817ab1dd Micron Technology, Inc., reserves the right to change products or specifications without notice.
HTF9C32_64_128x72K.fm - Rev. C 9/06 EN
18 ©2005 Micron Technology, Inc. All rights reserved.
256MB, 512MB, 1GB: (x72, SR) 244-Pin DDR2 Registered MiniDIMM
Module Dimensions
Module Dimensions
Figure 10: 244-pin DIMM DDR2 Module Dimensions
Notes: 1. All dimensions are in millimeters (inches); MAX/MIN or typical (TYP) where noted.
2. The dimensional diagram is for reference only. Refer to the MO document for complete
design dimensions.
U1 U2 U3
U6
U7
U4 U5
U9 U10
U8
U11 U12
82.127 (3.233)
81.873 (3.223)
FRONT VIEW
30.099 (1.185)
29.848 (1.175)
20.0 (0.787)
TYP
10.0 (0.394)
TYP
1.0 (0.039)
TYP
2.00 (0.079) R
X2
1.00 (0.039) R
X2
0.50 (0.02) R
1.80 (0.071) D
X2
6.0 (0.236)
TYP
2.0 (0.079)
TYP
78.0 (3.071)
TYP
0.60 (0.024)
TYP
0.45 (0.018)
TYP
PIN 1
PIN 122
42.9 (1.689)
TYP
BACK VIEW
3.3 (0.130)
TYP
3.6 (0.142) TYP
33.6 (3.323)
TYP
38.4 (1.512)
TYP
3.2 0.126) TYP
3.80 (0.150)
MAX
1.10 (0.043)
0.90 (0.035)
PIN 244
PIN 123
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18

MT9HTF6472KY-667B3

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Buy MT9HTF6472KY-667B3
Manufacturer:
Micron
Description:
MOD DDR2 SDRAM 512MB 244MRDIMM
Lifecycle:
New from this manufacturer.
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