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SI4618DY-T1-E3

P1-P3P4-P6P7-P9P10-P12P13-P14
Vishay Siliconix
Si4618DY
Document Number: 74450
S09-2109-Rev. B, 12-Oct-09
www.vishay.com
1
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)
I
D
(A)
a
Q
g
(Typ.)
Channel-1 30
0.017 at V
GS
= 10 V
8.0
12.5
0.0195 at V
GS
= 4.5 V
7.5
Channel-2 30
0.010 at V
GS
= 10 V
15.2
17
0.0115 at V
GS
= 4.5 V
14.1
SCHOTTKY PRODUCT SUMMARY
V
DS
(V)
V
SD
(V)
Diode Forward Voltage
I
F
(A)
a
30 0.43 V at 1.0 A 3.8
G
1
D
1
S
2
S
1
/D
2
S
2
S
1
/D
2
G
2
S
1
/D
2
SO-8
5
6
7
8
T op V i e w
2
3
4
1
Ordering Information: Si4618DY-T1-E3 (Lead (Pb)-free)
Si4618DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
1
G
2
S
2
N-Channel 2
MOSFET
Schottky Diod
e
G
1
N-Channel 1
MOSFET
S
1
/D
2
Notes:
a. Based on T
C
= 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 125 °C/W (Channel-1) and 100 °C/W (Channel-2).
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol Channel-1 Channel-2 Unit
Drain-Source Voltage
V
DS
30 30
V
Gate-Source Voltage
V
GS
± 16
± 16
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
8.0 15.2
A
T
C
= 70 °C
6.4 12.1
T
A
= 25 °C
6.7
b, c
11.4
b, c
T
A
= 70 °C
5.4
b, c
9.1
b, c
Pulsed Drain Current (10 µs Pulse Width)
I
DM
35 60
Source-Drain Current Diode Current
T
C
= 25 °C
I
S
1.8 3.8
T
A
= 25 °C
1.25
b, c
2.4
b, c
Pulsed Source-Drain Current
I
SM
35 35
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
15 15
Single Pulse Avalanche Energy
E
AS
11.2 11.2 mJ
Maximum Power Dissipation
T
C
= 25 °C
P
D
1.98 4.16
W
T
C
= 70 °C
1.26 2.66
T
A
= 25 °C
1.38
b, c
2.35
b, c
T
A
= 70 °C
0.88
b, c
1.5
b, c
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol
Channel-1 Channel-2
Unit
Typ. Max. Typ. Max.
Maximum Junction-to-Ambient
b, d
t ≤ 10 s
R
thJA
72 90 43 53
°C/W
Maximum Junction-to-Foot (Drain) Steady State
R
thJF
51 63 25 30
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• 100 % R
g
and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook Logic dc-to-dc
• Low Current dc-to-dc
www.vishay.com
2
Document Number: 74450
S09-2109-Rev. B, 12-Oct-09
Vishay Siliconix
Si4618DY
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions
Min.
Typ.
a
Max.
Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= 1 mA
Ch-1 30 V
V
GS
= 0 V, I
D
= 1 mA
Ch-2 30
V
DS
Temperature Coefficient ΔV
DS
/T
J
I
D
= 250 µA
Ch-1 35
V
GS(th)
Temperature Coefficient ΔV
GS(th)
/T
J
I
D
= 250 µA
Ch-1 - 6
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 1 mA
Ch-1 1 2.5
V
DS
= V
GS
, I
D
= 1 mA
Ch-2 1 2.5
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 16 V
Ch-1 100
µA
V
DS
= 0 V, V
GS
= ± 16 V
Ch-2 100
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
Ch-1 0.001
mA
V
DS
= 30 V, V
GS
= 0 V
Ch-2 0.05 0.5
V
DS
= 30 V, V
GS
= 0 V, T
J
= 100 °C
Ch-1 0.025
V
DS
= 30 V, V
GS
= 0 V, T
J
= 100 °C
Ch-2 3 15
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
Ch-1 20
A
V
DS
= 5 V, V
GS
= 10 V
Ch-2 20
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 10 V, I
D
= 8 A
Ch-1 0.014 0.017
Ω
V
GS
= 10 V, I
D
= 8 A
Ch-2 0.0083 0.010
V
GS
= 4.5 V, I
D
= 5 A
Ch-1 0.016 0.0195
V
GS
= 4.5 V, I
D
= 5 A
Ch-2 0.0095 0.0115
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 8 A
Ch-1 40
S
V
DS
= 15 V, I
D
= 8 A
Ch-2 47
Dynamic
a
Input Capacitance
C
iss
Channel-1
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
Channel-2
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
Ch-1 1535
pF
Ch-2 2290
Output Capacitance
C
oss
Ch-1 205
Ch-2 360
Reverse Transfer Capacitance
C
rss
Ch-1 91
Ch-2 117
Total Gate Charge
Q
g
V
DS
= 15 V, V
GS
= 10 V, I
D
= 8 A
Ch-1 29 44
nC
V
DS
= 15 V, V
GS
= 10 V, I
D
= 8 A
Ch-2 39 59
Channel-1
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 8 A
Channel-2
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 8 A
Ch-1 12.5 19
Ch-2 17 26
Gate-Source Charge
Q
gs
Ch-1 4.1
Ch-2 5.6
Gate-Drain Charge
Q
gd
Ch-1 3.4
Ch-2 4
Gate Resistance
R
g
f = 1 MHz
Ch-1 1.8 3.0
Ω
Ch-2 1.9 3.0
Document Number: 74450
S09-2109-Rev. B, 12-Oct-09
www.vishay.com
3
Vishay Siliconix
Si4618DY
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions
Min.
Typ.
a
Max.
Unit
Dynamic
a
Tu r n - On D el ay T i m e
t
d(on)
Channel-1
V
DD
= 15 V, R
L
= 3 Ω
I
D
≅ 5 A, V
GEN
= 10 V, R
g
= 1 Ω
Channel-2
V
DD
= 15 V, R
L
= 3 Ω
I
D
≅ 5 A, V
GEN
= 10 V, R
g
= 1 Ω
Ch-1 8 15
ns
Ch-2 9 16
Rise Time
t
r
Ch-1 22 33
Ch-2 24 36
Turn-Off Delay Time
t
d(off)
Ch-1 20 30
Ch-2 26 39
Fall Time
t
f
Ch-1 8 15
Ch-2 8 15
Tu r n - O n D e l ay T i m e
t
d(on)
Channel-1
V
DD
= 15 V, R
L
= 3 Ω
I
D
≅ 5 A, V
GEN
= 4.5 V, R
g
= 1 Ω
Channel-2
V
DD
= 15 V, R
L
= 3 Ω
I
D
≅ 5 A, V
GEN
= 4.5 V, R
g
= 1 Ω
Ch-1 24 36
Ch-2 24 36
Rise Time
t
r
Ch-1 87 130
Ch-2 97 145
Turn-Off Delay Time
t
d(off)
Ch-1 30 45
Ch-2 35 53
Fall Time
t
f
Ch-1 34 51
Ch-2 45 68
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I
S
T
C
= 25 °C
Ch-1 1.8
A
Ch-2 3.8
Pulse Diode Forward Current
a
I
SM
Ch-1 35
Ch-2 35
Body Diode Voltage
V
SD
I
S
= 2 A
Ch-1 0.77 1.1
V
I
S
= 1 A
Ch-2 0.37 0.43
Body Diode Reverse Recovery Time
t
rr
Channel-1
I
F
= 4 A, dI/dt = 100 A/µs, T
J
= 25 °C
Channel-2
I
F
= 4 A, dI/dt = 100 A/µs, T
J
= 25 °C
Ch-1 22 33
ns
Ch-2 26 39
Body Diode Reverse Recovery Charge
Q
rr
Ch-1 15 23
nC
Ch-2 15 23
Reverse Recovery Fall Time
t
a
Ch-1 13
ns
Ch-2 13
Reverse Recovery Rise Time
t
b
Ch-1 9
Ch-2 13
P1-P3P4-P6P7-P9P10-P12P13-P14

SI4618DY-T1-E3

Mfr. #:
Buy SI4618DY-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 781-SI4816BDY-T1-GE3
Lifecycle:
New from this manufacturer.
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