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SI4618DY-T1-E3

P1-P3P4-P6P7-P9P10-P12P13-P14
Document Number: 74450
S09-2109-Rev. B, 12-Oct-09
www.vishay.com
7
Vishay Siliconix
Si4618DY
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
000101110
-1
10
-4
100
0.2
0.1
0.05
0.02
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
Single Pulse
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 110 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3
10
-2
01110
-1
10
-4
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
www.vishay.com
8
Document Number: 74450
S09-2109-Rev. B, 12-Oct-09
Vishay Siliconix
Si4618DY
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
10
20
30
40
50
0.0 0.6 1.2 1.8 2.4 3.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
= 10 V thru 5 V
- Drain Current (A)I
D
3 V
0.007
0.008
0.009
0.010
0.011
0.012
0 1020304050
I
D
- Drain Current (A)
V
GS
= 10 V
- On-Resistance (Ω)R
DS(on)
V
GS
= 4.5 V
0
2
4
6
8
10
0918 27 36 45
Q
g
- Total Gate Charge (nC)
I
D
= 8 A
- Gate-to-Source Voltage (V)V
GS
V
DS
V
DS
= 20 V
V
DS
= 30 V
= 10 V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
V
GS
- Gate-to-Source Voltage (V)
0
1
2
3
4
5
012345
T
C
= 25 °C
T
C
= - 55 °C
T
C
= 125 °C
- Drain Current (A)I
D
C
rss
V
DS
- Drain-to-Source Voltage (V)
0
560
1120
1680
2240
2800
061218 24 30
C
oss
C
iss
C - Capacitance (pF)
T
J
- Junction Temperature (°C)
0.6
0.9
1.2
1.5
1.8
- 50 - 25 0 25 50 75 100 125 150
I
D
= 8 A
R
DS(on)
- On-Resistance
(Normalized)
V
GS
= 4.5 V
V
GS
= 10 V
Document Number: 74450
S09-2109-Rev. B, 12-Oct-09
www.vishay.com
9
Vishay Siliconix
Si4618DY
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Reverse Current (Schottky)
1.0 1.2
0.001
10
100
0.00 0.2 0.4 0.6 0.8
25 °C
150 °C
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
1
0.1
0.01
125 150
10
-6
10
-2
10
-1
0255075100
10 V
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
10
-3
10
-4
10
-5
30 V
20 V
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
V
GS
- Gate-to-Source Voltage (V)
0.00
0.01
0.02
0.03
0.04
0.05
012345678 910
- On-Resistance (Ω)R
DS(on)
125 °C
25 °C
I
D
= 8 A
0
40
80
120
160
200
011100.0 0.01
Time (s)
Power (W)
0.1
Safe Operating Area, Junction-to-Ambient
V
DS
- Drain-to-Source Voltage (V)
* V
GS
minimum V
GS
at which R
DS(on)
is specified
100
1
00111.0
0.01
10
- Drain Current (A)I
D
0.1
1 ms
10 ms
10 s
DC
100 ms
1 s
10
T
A
= 25 °C
Single Pulse
Limited by R
DS(on)
*
P1-P3P4-P6P7-P9P10-P12P13-P14

SI4618DY-T1-E3

Mfr. #:
Buy SI4618DY-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 781-SI4816BDY-T1-GE3
Lifecycle:
New from this manufacturer.
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