September 2013 Doc ID 018529 Rev 2 1/21
1
VNS3NV04DP-E
OMNIFET II
fully autoprotected Power MOSFET
Features
■ ECOPACK
®
: lead free and RoHS compliant
■ Automotive Grade: compliance with AEC
guidelines
■ Linear current limitation
■ Thermal shutdown
■ Short circuit protection
■ Integrated clamp
■ Low current drawn from input pin
■ Diagnostic feedback through input pin
■ ESD protection
■ Direct access to the gate of the Power
MOSFET (analog driving)
■ Compatible with standard Power MOSFET
Description
The VNS3NV04DP-E device is made up of two
monolithic chips (OMNIFET II) housed in a
standard SO-8 package. The OMNIFET II is
designed using STMicroelectronics™ VIPower™
M0-3 technology and is intended for replacement
of standard Power MOSFETs in up to 50 kHz DC
applications.
Built-in thermal shutdown, linear current limitation
and overvoltage clamp protect the chip in harsh
environments.
Fault feedback can be detected by monitoring
voltage at the input pin
Max on-state resistance (per ch.) R
ON
120 mΩ
Current limitation (typ) I
LIMH
3.5 A
Drain-source clamp voltage V
CLAMP
40 V
Table 1. Device summary
Package
Order codes
Tube Tape and reel
SO-8 VNS3NV04DP-E VNS3NV04DPTR-E
www.st.com