VNS3NV04DP-E Electrical specifications
Doc ID 018529 Rev 2 7/21
2.2 Thermal data
2.3 Electrical characteristics
Values specified in this section are for -40 °C < T
j
< 150 °C, unless otherwise stated.
T
j
= 25 °C, unless otherwise specified
Table 3. Thermal data
Symbol Parameter Max value Unit
R
thj-lead
Thermal resistance junction-lead (per channel) 30 °C/W
R
thj-amb
Thermal resistance junction-ambient 80
(1)
1. When mounted on a standard single-sided FR4 board with 50mm
2
of Cu (at least 35 μm thick) connected
to all DRAIN pins of the relative channel
°C/W
Table 4. Off
Symbol Parameter Test conditions Min Typ Max Unit
V
CLAMP
Drain-source clamp
voltage
V
IN
=0V; I
D
= 1.5 A 40 45 55 V
V
CLTH
Drain-source clamp
threshold voltage
V
IN
=0V; I
D
=2mA 36 V
V
INTH
Input threshold
voltage
V
DS
=V
IN
; I
D
=1mA 0.5 2.5 V
I
ISS
Supply current from
input pin
V
DS
=0V; V
IN
= 5 V 100 150 µA
V
INCL
Input-source clamp
voltage
I
IN
=1mA 6 6.8 8 V
I
IN
=-1mA -1 -0.3 V
I
DSS
Zero input voltage
drain current
(V
IN
=0V)
V
DS
=13V; V
IN
=0V; T
j
=25°C 30 µA
V
DS
=25V; V
IN
=0V 75 µA
Table 5. On
Symbol Parameter Test conditions Min Typ Max Unit
R
DS(on)
Static drain-source on
resistance
V
IN
=5V; I
D
= 1.5 A; T
j
= 25 °C — — 120 mΩ
V
IN
=5V; I
D
= 1.5 A — — 240 mΩ
Table 6. Dynamic
Symbol Parameter Test conditions Min Typ Max Unit
g
fs
(1)
Forward
transconductance
V
DD
=13V; I
D
=1.5A — 5.0 — S
C
OSS
Output capacitance V
DS
=13V; f=1MHz; V
IN
=0V — 150 — pF
