VNS3NV04DPTR-E

P1-P3 P4-P6 P7-P9 P10-P12 P13-P15 P16-P18 P19-P21

Electrical specifications VNS3NV04DP-E

10/21 Doc ID 018529 Rev 2

Figure 6. Unclamped inductive load test circuits

Figure 7. Input charge test circuit

R

GEN

P

W

V

IN

GEN

ND8003

V

IN

VNS3NV04DP-E Electrical specifications

Doc ID 018529 Rev 2 11/21

Figure 8. Unclamped inductive waveforms

Electrical specifications VNS3NV04DP-E

12/21 Doc ID 018529 Rev 2

2.4 Electrical characteristics curves

Figure 9. Source-drain diode forward

characteristics

Figure 10. Static drain-source on

resistance

Figure 11. Derating curve Figure 12. Static drain-source on

resistance vs input voltage

(part 1)

Figure 13. Static drain-source on

resistance vs input voltage

(part 2)

Figure 14. Transconductance

0123456789101112

Id (A)

600

650

700

750

800

850

900

950

1000

1050

1100

Vsd (mV)

Vin=0V

0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55

Id(A)

0

100

200

300

400

500

600

700

800

900

1000

Rds(on) (mohms)

Tj=25ºC

Tj=150ºC

Tj=-40ºC

Vin=2.5V

3 3.5 4 4.5 5 5.5 6 6.5

Vin(V)

0

25

50

75

100

125

150

175

200

225

250

275

300

Rds(on) (mohms)

Id=3.5A

Id=1A

Id=3.5A

Id=1A

Id=3.5A

Id=1A

Tj=25ºC

Tj=150ºC

Tj=-40ºC

3 3.5 4 4.5 5 5.5 6 6.5

Vin(V)

0

25

50

75

100

125

150

175

200

225

250

Rds(on) (mohms)

Id=1.5A

Tj=150ºC

Tj=-40ºC

Tj=25ºC

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5

Id (A)

0

1

2

3

4

5

6

7

8

9

10

11

Gfs (S)

Vds=13V

Tj=25ºC

Tj=150ºC

Tj=-40ºC

P1-P3 P4-P6 P7-P9 P10-P12 P13-P15 P16-P18 P19-P21

VNS3NV04DPTR-E

Mfr. #:

Buy VNS3NV04DPTR-E

Manufacturer:

STMicroelectronics

Description:

Gate Drivers OMNIFET II VIPower 35mOhm 12A 40V

Lifecycle:

New from this manufacturer.

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