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HMC213BMS8E
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
P19-P21
Data Sheet
HMC213BMS8E
Rev. 0 | Page 7 of 21
IF
OUT
= 100 MHz, Lower Sideband
0
–5
–10
–15
–20
1.0
2.0
2.
5
3.
5
4.
0
1.5
3.0
4.
5
5.0
CONV
ERSI
ON G
AI
N (d
B)
RF F
REQ
UENCY
(GHz
)
+85°
C
+25
°C
–40
°
C
16439-0
15
Figure 13. Conv
ersion Gain
vs. RF Frequency
at Various T
emperatures,
LO = 13 dBm
30
0
INPU
T IP3
(dBm)
5
10
15
20
25
1.5
2.5
3.
0
4.0
4.5
2.0
3.5
5
.0
RF F
REQ
UENCY
(GHz
)
+85°
C
+25
°C
–40
°
C
16439-0
16
Figure 14. Input IP3 v
s. RF Frequency at Various T
emperatures,
LO = 13 dBm
0
–5
–10
–15
–20
1.0
2.0
2.
5
3.
5
4.
0
1.5
3.0
4.5
5.0
CONV
ERSI
ON G
AI
N (d
B)
RF F
REQ
UENCY
(GHz
)
LO =
9dBm
LO =
1
1dB
m
LO =
13dBm
LO =
15dBm
16439-0
17
Figure 15. Convers
ion Gain v
s. RF Frequency
at Various LO
Power Levels,
T
A
= 25°C
30
0
INPU
T IP3
(dBm)
5
10
15
20
25
1.5
2.5
3.
0
4.0
4.5
2.0
3.5
5
.0
RF F
REQ
UENCY
(GHz
)
LO =
9dB
m
LO =
1
1dBm
LO =
1
3dBm
LO =
1
5d
Bm
16439-0
18
Figure 16. Input IP3 vs. RF Freque
ncy at Various LO Power Levels,
T
A
= 25°C
HMC213BMS8E
Data Sheet
Rev. 0 | Page 8 of 21
IF
OUT
= 1500 MHz, Upper Sideband
3
.
03
.
54
.
04
.
5
5
.
0
RF F
REQ
UENCY
(GHz
)
0
–5
–10
–15
–20
2.5
CONV
ERSI
ON G
AI
N (d
B)
+85°
C
+25
°C
–40°
C
16439-0
19
Figure 17. Convers
ion Gain v
s. RF Frequency
at Various Temp
eratures,
LO = 13 dBm
30
0
3.0
3.5
4.0
4.5
5
.0
INPU
T IP3
(dBm)
RF F
REQ
UENCY
(GHz
)
+85°
C
+25
°C
–40°
C
5
10
15
20
25
16439-0
20
Figure 18. Input IP3 v
s. RF Frequency at Various T
emperatures,
LO = 13 dBm
20
15
10
5
0
INPUT P1dB (dBm)
3.0
3.5
4.0
4.5
5
.0
RF F
REQ
UENCY
(GHz
)
+85°
C
+25
°C
–40°
C
16439-0
21
Figure 19. Input P1dB vs. RF
Frequency at Vari
ous Temperatures,
LO = 13 dBm
2.5
3.0
4.
0
4.5
5.0
RF F
REQ
UENCY
(GHz
)
0
–5
–10
–15
–20
CONV
ERSI
ON G
AI
N (d
B)
LO =
9dBm
LO =
1
1dB
m
LO =
13dBm
LO =
15dBm
16439-0
22
Figure 20. Convers
ion Gain v
s. RF Frequency
at Various LO
Power Levels,
T
A
= 25°C
30
0
3.0
3.5
4.
0
4.5
5.0
INPU
T IP3
(dBm)
RF F
REQ
UENCY
(GHz
)
5
10
15
20
25
LO =
9dBm
LO =
1
1dB
m
LO =
13dBm
LO =
15dBm
16439-0
23
Figure 21. Input IP3 vs. RF Freque
ncy at Various LO Power Levels,
T
A
= 25°C
20
15
10
5
0
INPUT P1dB (dBm)
3.0
3.5
4.
0
4.5
5.0
RF F
REQ
UENCY
(GHz
)
LO = 9dBm
LO = 1
1dB
m
LO = 1
3dB
m
LO = 1
5dB
m
16439-0
24
Figure 22. Input P
1dB vs. RF Frequenc
y at Various LO
Power Levels,
T
A
= 25°C
Data Sheet
HMC213BMS8E
Rev. 0 | Page 9 of 21
IF
OUT
= 1500 MHz, Lower Sideband
0
–5
–10
–15
–20
1.0
1.5
2.0
2.5
3.
0
3.5
CONV
ERSI
ON G
AI
N (d
B)
RF F
REQ
UENCY
(GHz
)
+85°
C
+25
°C
–40°
C
16439-0
25
Figure 23. Conv
ersion Gain
vs. RF Frequency
at Various T
emperatures,
LO = 13 dBm
30
0
1.5
2.0
2.
5
3.0
3.5
INPU
T IP3
(dBm)
RF F
REQ
UENCY
(GHz
)
5
10
15
20
25
+85°
C
+25
°C
–40°
C
16439-0
26
Figure 24. Input IP3 v
s. RF Frequency at Various T
emperatures,
LO = 13 dBm
0
–5
–10
–15
–20
1.0
1.5
2.0
2.5
3.
0
3.5
CONV
ERSI
ON G
AI
N (d
B)
RF F
REQ
UENCY
(GHz
)
LO =
9dBm
LO =
1
1dB
m
LO =
13dBm
LO =
15dBm
16439-0
27
Figure 25. Convers
ion Gain v
s. RF Frequency
at Various LO
Power Levels,
T
A
= 25°C
30
0
1.5
2.0
2.
5
3.0
3.5
INPU
T IP3
(dBm)
RF F
REQ
UENCY
(GHz
)
5
10
15
20
25
LO =
9dB
m
LO =
1
1dBm
LO =
1
3dBm
LO =
1
5d
Bm
16439-0
28
Figure 26. Input IP3 vs. RF Freque
ncy at Various LO Power Levels,
T
A
= 25°C
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
P19-P21
HMC213BMS8E
Mfr. #:
Buy HMC213BMS8E
Manufacturer:
Analog Devices Inc.
Description:
RF Mixer Mixer
Lifecycle:
New from this manufacturer.
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