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TISP5150H3BJR-S

P1-P3P4-P6P7-P9P10-P11
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
JANUARY 1998 - REVISED JANUARY 2007
TISP5xxxH3BJ Overvoltage Protector Series
TISP5070H3BJ THRU TISP5190H3BJ
FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR
OVERVOLTAGE PROTECTORS
SMB Package (Top View)
Description
Analogue Line Card and ISDN Protection
- Analogue SLIC
- ISDN U Interface
- ISDN Power Supply
8 kV 10/700, 200 A 5/310 ITU-T K.20/21/45 rating
Ion-Implanted Breakdown Region
- Precise and Stable Voltage
Low Voltage Overshoot under Surge
Rated for International Surge Wave Shapes
Device Symbol
These devices are designed to limit overvoltages on the telephone and data lines. Overvoltages are normally caused by a.c. power system or
lightning flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is
typically used for the protection of ISDN power supply feeds. Two devices, one for the Ring output and the other for the Tip output, will provide
protection for single supply analogue SLICs. A combination of three devices will give a low capacitance protector network for the 3-point
protection of ISDN lines.
The protector consists of a voltage-triggered unidirectional thyristor with an anti-parallel diode. Negative overvoltages are initially clipped by
breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-
voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current
helps prevent d.c. latchup as the diverted current subsides. Positive overvoltages are limited by the conduction of the anti-parallel diode.
.............................................. UL Recognized Component
Device Name
V
DRM
V
V
(BO)
V
TISP5070H3BJ -58 -70
TISP5080H3BJ -65 -80
TISP5095H3BJ -75 -95
TISP5110H3BJ -80 -110
TISP5115H3BJ -90 -115
TISP5150H3BJ -120 -150
TISP5190H3BJ -160 -190
Wave Shape Standard
I
PPSM
A
2/10 GR-1089-CORE 500
8/20 ANSI C62.41 300
10/160 TIA-968-A 250
10/700 ITU-T K.20/21/45 200
10/560 TIA-968-A 160
10/1000 GR-1089-CORE 100
MD5UFCAB
12KA
SD5XAD
K
A
How to Order
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
Device Package Carrier
TISP5xxxH3BJ
BJ (J-Bend
DO-214AA/SMB)
Embossed
Tape Reeled
TISP5xxxH3BJ 5xxxH3 3000R-S
Insert xxx value corresponding to protection voltages of 070, 080, 110, 115 and 150.
Order As
Marking
Code
Std.
Quantity
*
R
o
H
S
C
O
M
P
L
I
A
N
T
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
JANUARY 1998 - REVISED JANUARY 2007
Absolute Maximum Ratings, T
A
= 25 °C (Unless Otherwise Noted)
Electrical Characteristics, T
A
= 25 °C (Unless Otherwise Noted)
TISP5xxxH3BJ Overvoltage Protection Series
Rating Symbol Value Unit
Repetitive peak off-state voltage (see Note 1)
'5070H3BJ
'5080H3BJ
'5095H3BJ
'5110H3BJ
'5115H3BJ
'5150H3BJ
'5190H3BJ
V
DRM
-58
-65
-75
-80
-90
-120
-160
V
Non-repetitive peak impulse current (see Notes 2, 3 and 4)
I
PPSM
±500
±300
±250
±220
±200
±200
±200
±160
±100
A
2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape)
8/20 µs (IEC 61000-4-5, 1.2/50 µs voltage, 8/20 µs current combination wave generator)
10/160 µs (TIA-968-A, 10/160 µs voltage wave shape)
5/200 µs (VDE 0433, 10/700 µs voltage waveshape)
0.2/310 µs (I3124, 0.5/700 µs waveshape)
5/310 µs (ITU-T K.44, 10/700 µs voltage waveshape used in K.20/21/45)
5/310 µs (FTZ R12, 10/700 µs voltage waveshape)
10/560 µs (TIA-968-A, 10/560 µs voltage wave shape)
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape)
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
I
TSM
55
60
2.1
A
20 ms, 50 Hz (full sine wave)
16.7 ms, 60 Hz (full sine wave)
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current, GR-1089-CORE 2/10 µs wave shape di
T
/dt ±400 A/µs
Junction temperature T
J
-40 to +150 °C
Storage temperature range T
stg
-65 to +150 °C
NOTES: 1. See Figure 9 for voltage values at lower temperatures.
2. Initially the device must be in thermal equilibrium with T
J
= 25 °C.
3. The surge may be repeated after the device returns to its initial conditions.
4. See Figure 10 for current ratings at other temperatures.
5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. Derate current values at -0.61 %/°C for ambient temperatures above 25 °C. See Figure 8 for current ratings at other
durations.
Parameter Test Conditions Min Typ Max Unit
I
DRM
Repetitive peak off-state current V
D
= V
DRM
T
A
= 25 °C
T
A
= 85 °C
-5
-10
µA
V
(BO)
Breakover voltage dv/dt = -250 V/ms, R
SOURCE
= 300 Ω
'5070H3BJ
'5080H3BJ
'5095H3BJ
'5110H3BJ
'5115H3BJ
'5150H3BJ
'5190H3BJ
-70
-80
-95
-110
-115
-150
-190
V
V
(BO)
Impulse breakover voltage
dv/dt ≥ -1000 V/µs, Linear voltage ramp,
Maximum ramp value = -500 V
di/dt = -20 A/µs, Linear current ramp,
Maximum ramp value = -10 A
'5070H3BJ
'5080H3BJ
'5095H3BJ
'5110H3BJ
'5115H3BJ
'5150H3BJ
'5190H3BJ
-80
-90
-105
-120
-125
-160
-200
V
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
JANUARY 1998 - REVISED JANUARY 2007
Thermal Characteristics,
T
A
= 25
°C (Unless Otherwise Noted)
Electrical Characteristics, T
A
= 25 °C (Unless Otherwise Noted) (Continued)
TISP5xxxH3BJ Overvoltage Protection Series
I
(BO)
Breakover current dv/dt = -250 V/ms, R
SOURCE
= 300 Ω -150 -600 mA
V
F
Forward voltage I
F
=5A, t
W
= 500 µs3V
V
FRM
Peak forward recovery voltage
dv/dt ≤ +1000 V/µs, Linear voltage ramp,
Maximum ramp value = +500 V
di/dt = +20 A/µs, Linear current ramp,
Maximum ramp value = +10 A
5V
V
T
On-state voltage I
T
=-5A, t
w
= 500 µs-3V
I
H
Holding current I
T
= -5 A, di/dt = +30 mA/ms -150 -600 mA
dv/dt Critical rate of rise of off-state voltage Linear voltage ramp, maximum ramp value < 0.85V
DRM
-5 kV/µs
I
D
Off-state current V
D
= -50 V T
A
= 85 °C -10 µA
C
O
Off-state capacitance
(see Note 6)
f = 1 MHz, V
d
= 1 V rms, V
D
= -1 V
'5070H3BJ
'5080H3BJ
'5095H3BJ
'5110H3BJ
'5115H3BJ
'5150H3BJ
'5190H3BJ
300
280
260
240
214
140
140
420
390
365
335
300
195
195
pF
f = 1 MHz, V
d
= 1 V rms, V
D
= -2 V
'5070H3BJ
'5080H3BJ
'5095H3BJ
'5110H3BJ
'5115H3BJ
'5150H3BJ
'5190H3BJ
260
245
225
205
180
120
120
365
345
315
285
250
170
170
f = 1 MHz, V
d
= 1 V rms, V
D
= -50 V
'5070H3BJ
'5080H3BJ
'5095H3BJ
'5110H3BJ
'5115H3BJ
'5150H3BJ
'5190H3BJ
90
80
73
65
56
35
35
125
110
100
90
80
50
50
f = 1 MHz, V
d
= 1 V rms, V
D
= -100 V
'5150H3BJ
'5190H3BJ
30
30
40
30
NOTE: 6. Up to 10 MHz the capacitance is essentially independent of frequency. Above 10 MHz the effective capacitance is strongly
dependent on connection inductance.
Parameter Test Conditions Min Typ Max Unit
R
θJA
Junction to ambient thermal resistance
EIA/JESD51-3 PCB, I
T
= I
TSM(1000)
(see Note 7)
113
°C/W
265 mm x 210 mm populated line card,
4-layer PCB, I
T
= I
TSM(1000)
50
NOTE: 7. EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
Parameter Test Conditions Min Typ Max Unit
P1-P3P4-P6P7-P9P10-P11

TISP5150H3BJR-S

Mfr. #:
Buy TISP5150H3BJR-S
Manufacturer:
Bourns
Description:
Thyristor Surge Protection Devices (TSPD) Forward Conducting Unidirectional
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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