TISP5150H3BJR-S

Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
JANUARY 1998 - REVISED JANUARY 2007
Parameter Measurement Information
TISP5xxxH3BJ Overvoltage Protection Series
Figure 1. Voltage-Current Characteristic for Terminal Pair
All Measurements are Referenced to the Thyristor Anode, A (Pin 1)
-v
I
(BR)
V
(BR)
V
(BR)M
V
DRM
I
DRM
V
D
I
H
I
T
V
T
I
TRM
I
PPSM
V
(BO)
I
(BO)
I
D
Quadrant I
Forward
Conduction
Characteristic
+v
+i
I
F
V
F
I
FRM
I
PPSM
-i
Quadrant III
Switching
Characteristic
PM-TISP5xxx-001-a
I
FSM
I
TSM
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
JANUARY 1998 - REVISED JANUARY 2007
Typical Characteristics
TISP5xxxH3BJ Overvoltage Protection Series
Figure 2. Figure 3.
Figure 4. Figure 5.
T - Junction Temperature - °C
-25 0 25 50 75 100 125 150
I
D
- Off-State Current - µA
0·001
0·01
0·1
1
10
100
TC5XAFA
V
D
= -50 V
T
JJ
- Junction Temperature - °C
-25 0 25 50 75 100 125 150
Normalized Breakover Voltage
0.95
1.00
1.05
1.10
TC5XAIA
V
T
, V
F
- On-State Voltage, Forward Voltage - V
0.7 1.5 2 3 4 5 7110
I
T
, I
F
- On-State Current, Forward Current - A
1.5
2
3
4
5
7
15
20
30
40
50
70
150
200
1
10
100
T
A
= 25 °C
t
W
= 100 µs
TC5LAC
V
T
V
F
T
J
- Junction Temperature - °C
-25 0 25 50 75 100 125 150
Normalized Holding Current
0.4
0.5
0.6
0.7
0.8
0.9
1.5
2.0
1.0
TC5XAD
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
NORMALIZED BREAKOVER VOLTAGE
vs
JUNCTION TEMPERATURE
NORMALIZED HOLDING CURRENT
vs
JUNCTION TEMPERATURE
ON-STATE AND FORWARD CURRENTS
vs
ON-STATE AND FORWARD VOLTAGES
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
JANUARY 1998 - REVISED JANUARY 2007
Typical Characteristics
TISP5xxxH3BJ Overvoltage Protection Series
Figure 6. Figure 7.
OFF-STATE CAPACITANCE
vs
OFF-STATE VOLTAGE
V
D
- Negative Off-state Voltage - V
1 2 3 5 10 20 30 50 100
C
off
- Capacitance - pF
20
30
40
50
60
70
80
90
150
200
300
100
T
J
= 25°C
V
d
= 1 Vrms
TC5XABBa
'5110
'5080
'5070
'5095
'5115
'5150 &
'5190
DIFFERENTIAL OFF-STATE CAPACITANCE
vs
RATED REPETITIVE PEAK OFF-STATE VOLTAGE
V
DRM
- Negative Repetitive Peak Off-State Voltage - V
58 65 75 80 90 120
C - Differential Off-State Capacitance - pF
80
90
100
110
120
130
140
150
160
170
180
190
C = C
off(-2 V)
- C
off(-50 V)
TC5XAEB
'5150
'5110
'5070
'5080
'5115
'5095

TISP5150H3BJR-S

Mfr. #:
Manufacturer:
Bourns
Description:
Thyristor Surge Protection Devices (TSPD) Forward Conducting Unidirectional
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union