FEDL610Q178FULL-01
ML610Q178
16/28
Flash Memory Operating Conditions
(V
SS
= 0V)
Parameter Symbol Condition Range Unit
Operating temperature
T
OP
At write/erase 0 to +40 °C
V
DD
At write/erase 2.7 to 5.5
V
DDL
At write/erase
*1
2.5 to 2.75
Operating voltage
V
PP
At write/erase
1
7.7 to 8.3
V
Maximum rewrite count
C
EP
― 80 times
Data retention period
Y
DR
― 10 years
*
1
: At the writing of a flash ROM, it is necessary to supply voltage to V
DDL
pin within the limits of the above-mentioned
regulation. Pulldown resistance is built in the V
PP
pin.
DC Characteristics (1 of 5)
(V
DD
=2.2 to 5.5V, V
SS
=0V, Ta=−40 to +85°C, unless otherwise specified)
Parameter Symbol Condition Min. Typ. Max. Unit
Measuring
circuit
High-speed crystal oscillation
start time
T
XTH
― ―
2 20 ms
Low-speed crystal oscillation
start time*
2
T
XTL
― ― 0.6 2 s
Low-speed RC oscillator
frequency
f
LCR
Ta= -10 to 60°C
Typ
-5%
32.7k
Typ
+5%
Hz
PLL oscillation frequency
f
PLL
LSCLK=32.768kHz
100 clock average
Typ
-1%
8.192
Typ
+1%
MHz
Reset pulse width
P
RST
― 100 ― ―
Reset noise rejection pulse
width
P
NRST
― ― ― 0.4
μs
1
*
1
: Use 32.768KHz Crystal Oscillator DT-26 (Daishinku) with capacitance C
GL
/C
DL
＝12pF.
Reset
RESET_N
Reset by RESET_N pin
P
RST
VIL1VIL1
