BGS8L2
SiGe:C Low-noise amplifier MMIC with bypass switch for LTE
Rev. 6 — 29 June 2018 Product data sheet
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1 General description
The BGS8L2, also known as the LTE3001L, is a Low-Noise Amplifier (LNA) with bypass
switch for LTE receiver applications, available in a small plastic 6-pin extremely thin
leadless package. The BGS8L2 requires one external matching inductor.
The BGS8L2 delivers system-optimized gain for both primary and diversity applications
where sensitivity improvement is required. The high linearity of these low noise devices
ensures the required receive sensitivity independent of cellular transmit power level in
FDD (Frequency Division Duplex) systems. When receive signal strength is sufficient, the
BGS8L2 can be switched off to operate in bypass mode at a 1 µA current, to lower power
consumption.
The BGS8L2 can also be used in Digital TV receivers in the frequency range 460 MHz -
740 MHz.
The BGS8L2 is optimized for 460 MHz to 960 MHz.
2 Features and benefits
Operating frequency from 460 MHz to 960 MHz
Noise figure = 0.85 dB
Gain 13 dB
High input 1 dB compression point of -1 dBm
Bypass switch insertion loss of 1.9 dB
IP3
i
of 1.5 dBm
Supply voltage 1.5 V to 3.1 V
Self-shielding package concept
Integrated supply decoupling capacitor
Optimized performance at a supply current of 5.2 mA @ 2.8 V
Power-down mode current consumption < 1 μA
Integrated temperature stabilized bias for easy design
Requires only one input matching inductor
Input and output DC decoupled
ESD protection on all pins (HBM > 2 kV)
Integrated matching for the output
Available in 6-pins leadless package 1.1 mm × 0.7 mm × 0.37 mm; 0.4 mm pitch:
SOT1232
180 GHz transit frequency - SiGe:C technology
Moisture sensitivity level 1
NXP Semiconductors
BGS8L2
SiGe:C Low-noise amplifier MMIC with bypass switch for LTE
BGS8L2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2018. All rights reserved.
Product data sheet Rev. 6 — 29 June 2018
2 / 18
3 Applications
LNA for LTE reception in smart phones
Feature phones
Tablet PCs
RF front-end modules
Digital TV receivers
NXP Semiconductors
BGS8L2
SiGe:C Low-noise amplifier MMIC with bypass switch for LTE
BGS8L2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2018. All rights reserved.
Product data sheet Rev. 6 — 29 June 2018
3 / 18
4 Quick reference data
Table 1. Quick reference data
f = 882 MHz; V
CC
= 2.8 V; V
I(CTRL)
≥ 0.8 V; T
amb
= 25 °C; input matched to 50 Ω using a 8.2 nH inductor; unless otherwise
specified.
Symbol Parameter Conditions Min Typ Max Unit
V
CC
supply voltage 1.5 - 3.1 V
in gain mode - 5.2 - mAI
CC
supply current
in bypass mode - - 1 μA
in gain mode
[1]
- 13.0 - dBG
p
power gain
in bypass mode
[1]
- -1.9 - dB
NF noise figure
[1][2]
- 0.85 - dB
P
i(1dB)
input power at 1 dB gain compression
[1]
- -1.0 - dBm
IP3
i
input third-order intercept point
[1]
- 1.5 - dBm
[1] E-UTRA operating band 5 (869 MHz to 894 MHz).
[2] PCB losses are subtracted.
5 Ordering information
Table 2. Ordering information
PackageType number
Name Description Version
BGS8L2 XSON6 plastic extremely thin small outline package; no
leads; 6 terminals; body 1.1 × 0.7 × 0.37 mm
SOT1232
OM17005 EVB BGS8L2 evaluation board -
6 Marking
Table 3. Marking codes
Type number Marking code
BGS8L2 M

BGS8L2X

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
RF Amplifier BGS8L2/XSON6///REEL 7 Q1 NDP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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