NXP Semiconductors
BGS8L2
SiGe:C Low-noise amplifier MMIC with bypass switch for LTE
BGS8L2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2018. All rights reserved.
Product data sheet Rev. 6 — 29 June 2018
15 / 18
15 Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe
precautions for handling electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5,
JESD625-A or equivalent standards.
16 Abbreviations
Table 11. Abbreviations
Acronym Description
ESD ElectroStatic Discharge
HBM Human Body Model
LTE Long-Term Evolution
MMIC Monolithic Microwave Integrated Circuit
PCB Printed-Circuit Board
SiGe:C Silicon Germanium Carbon
17 Revision history
Table 12. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BGS8L2 v.6 20180629 product data sheet - BGS8L2 v.5
Modifications: changed V
I(CTRL)
Max ON state value to V
cc
at recommended operating conditions
BGS8L2 v.5 20171116 product data sheet - BGS8L2 v.4
Modifications: • Table 8: added conditions f = 470 MHz, f = 650 MHz, and f = 740 MHz
• Table 9: added conditions f = 470 MHz, f = 650 MHz, and f = 740 MHz
• Table 10: added value 18 nH
BGS8L2 v.4 20170117 Product data sheet - BGS8L2 v.3
Modifications: • Section 1: added LTE3001L according to our new naming convention
BGS8L2 v.3 20160329 Product data sheet - BGS8L2 v.2
Modifications: • Table 8 on page 5: added maximum value in G
p
• Table 9 on page 6: added minimum value in P
i(1dB)
• Table 9 on page 6: added maximum value in IP3
i
BGS8L2 v.2 20160316 Product data sheet - BGS8L2 v.1
Modifications: • added phase variation Table 8 on page 5 and Table 9 on page 6
BGS8L2 v.1 20151221 Product data sheet - -