NXP Semiconductors
BGS8L2
SiGe:C Low-noise amplifier MMIC with bypass switch for LTE
BGS8L2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2018. All rights reserved.
Product data sheet Rev. 6 — 29 June 2018
9 / 18
Symbol Parameter Conditions Min Typ Max Unit
Bypass mode
I
CC
supply current V
I(CTRL)
< 0.3 V - - 1 μA
f = 470 MHz, L1 = 18 nH
[1]
-3.0 -1.5 0.0 dB
f = 650 MHz, L1 = 18 nH
[1]
-4.0 -2.5 -1.0 dB
f = 740 MHz, L1 = 18 nH
[1]
[2]
-4.5 -3.0 -1.5 dB
f = 740 MHz, L1 = 8.2 nH
[1]
[2]
-3.1 -1.6 -0.1 dB
f = 882 MHz, L1 = 8.2 nH
[3]
-3.5 -2.0 -0.5 dB
G
p
power gain
f = 943 MHz, L1 = 8.2 nH
[1]
[4]
-3.5 -2.0 -0.5 dB
f = 470 MHz, L1 = 18 nH - 13.0 - dB
f = 650 MHz, L1 = 18 nH - 7.5 - dB
f = 740 MHz, L1 = 18 nH
[2]
- 6.0 - dB
f = 740 MHz, L1 = 8.2 nH
[2]
- 14.5 - dB
f = 882 MHz, L1 = 8.2 nH
[3]
- 11.5 - dB
RL
in
input return loss
f = 943 MHz, L1 = 8.2 nH
[4]
- 10.5 - dB
f = 470 MHz, L1 = 18 nH - 12.0 - dB
f = 650 MHz, L1 = 18 nH - 8.0 - dB
f = 740 MHz, L1 = 18 nH
[2]
- 6.5 - dB
f = 740 MHz, L1 = 8.2 nH
[2]
- 12.5 - dB
f = 882 MHz, L1 = 8.2 nH
[3]
- 11.0 - dB
RL
out
output return loss
f = 943 MHz, L1 = 8.2 nH
[4]
- 10.5 - dB
between gain mode and bypass mode
f = 470 MHz, L1 = 18 nH - - - deg
f = 650 MHz, L1 = 18 nH - - - deg
f = 740 MHz, L1 = 18 nH - - - deg
f = 740 MHz, L1 = 8.2 nH deg
f = 882 MHz, L1 = 8.2 nH
[1]
-5.0 - +5.0 deg
Δφ phase variation
f = 943 MHz, L1 = 8.2 nH - - - deg
[1] Guaranteed by device design; not tested in production.
[2] E-UTRA operating band 17 (734 MHz to 746 MHz).
[3] E-UTRA operating band 5 (869 MHz to 894 MHz).
[4] E-UTRA operating band 8 (925 MHz to 960 MHz).
[5] RL
in
value can be increased by using a higher value for the series input matching inductor L1.
[6] PCB losses are subtracted.
