REV. C–4–
AD8011
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although the
AD8011 features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended
to avoid performance degradation or loss of functionality.
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V
Internal Power Dissipation
2
Plastic DIP Package (N) . . . . . . . Observe Derating Curves
Small Outline Package (R) . . . . . . Observe Derating Curves
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . . ±V
S
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . ±2.5 V
Output Short-Circuit Duration
. . . . . . . . . . . . . . . . . .Observe Power Derating Curves
Storage Temperature Range (N, R) . . . . . . . –65°C to +125°C
Operating Temperature Range (A Grade) . . . –40°C to +85°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . . 300°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2
Specification is for device in free air:
8-Lead PDIP Package:
JA
= 90°C/W
8-Lead SOIC Package:
JA
= 155°C/W
2.0
1.5
0.5
–50 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90
AMBIENT TEMPERATURE (ⴗC)
1.0
0
MAXIMUM POWER DISSIPATION (W)
T
J
= 150ⴗC
8-LEAD PLASTIC DIP PACKAGE
8-LEAD SOIC PACKAGE
Figure 3. Maximum Power Dissipation vs. Temperature
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the AD8011
is limited by the associated rise in junction temperature. The
maximum safe junction temperature for plastic encapsulated
devices is determined by the glass transition temperature of the
plastic, approximately 150°C. Exceeding this limit temporarily
may cause a shift in parametric performance due to a change in
the stresses exerted on the die by the package. Exceeding a
junction temperature of 175°C for an extended period can result
in device failure.
While the AD8011 is internally short-circuit protected, this may
not be sufficient to guarantee that the maximum junction tem-
perature is not exceeded under all conditions. To ensure proper
operation, it is necessary to observe the maximum power derating
curves (shown in Figure 3).
0.01F
0.01F
10F
10F
R
L
1k⍀
1k⍀1k⍀
50⍀
V
IN
V
OUT
+V
S
–V
S
Figure 4. Test Circuit; Gain = +2
0.01F
0.01F
10F
10F
R
L
1k⍀
1k⍀
1k⍀
V
IN
V
OUT
+V
S
–V
S
52.3⍀
Figure 5. Test Circuit; Gain = –1
ORDERING GUIDE
Temperature Package Package
Model Range Description Option
AD8011AN –40°C to +85°C8-Lead PDIP N-8
AD8011AR –40°C to +85°C 8-Lead SOIC R-8
AD8011AR-REEL –40°C to +85°C 13" Tape and Reel R-8
AD8011AR-REEL7 –40°C to +85°C 7" Tape and Reel R-8
