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PHPT61003NY
100 V, 3 A NPN high power bipolar transistor
11 September 2015 Product data sheet
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1. General description
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device
(SMD) power plastic package.
PNP complement: PHPT61003PY
2. Features and benefits
High thermal power dissipation capability
Suitable for high temperature applications up to 175 °C
Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
High energy efficiency due to less heat generation
AEC-Q101 qualified
3. Applications
Power management
Loadswitch
Linear mode voltage regulator
Backlighting applications
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CEO
collector-emitter
voltage
open base - - 100 V
I
C
collector current - - 3 A
I
CM
peak collector current single pulse; t
p
≤ 1 ms - - 8 A
I
C
= 1 A; I
B
= 50 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
- 90 150 R
CEsat
collector-emitter
saturation resistance
I
C
= 3 A; I
B
= 300 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
- 75 110
NXP Semiconductors
PHPT61003NY
100 V, 3 A NPN high power bipolar transistor
PHPT61003NY All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 11 September 2015 2 / 17
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 E emitter
2 E emitter
3 E emitter
4 B base
mb C collector
mb
1 2 3 4
LFPAK56; Power-
SO8 (SOT669)
sym123
C
E
B
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PHPT61003NY LFPAK56;
Power-SO8
Plastic single-ended surface-mounted package
(LFPAK56; Power-SO8); 4 leads
SOT669
7. Marking
Table 4. Marking codes
Type number Marking code
PHPT61003NY 1003NAB

PHPT61003NYX

Mfr. #:
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT NPN High Power BipolarTransistor
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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