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PHPT61003NYX

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18
NXP Semiconductors
PHPT61003NY
100 V, 3 A NPN high power bipolar transistor
PHPT61003NY All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 11 September 2015 6 / 17
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
CB
= 80 V; I
E
= 0 A; T
amb
= 25 °C - - 100 nAI
CBO
collector-base cut-off
current
V
CB
= 80 V; I
E
= 0 A; T
j
= 150 °C - - 50 µA
I
CES
collector-emitter cut-off
current
V
CE
= 80 V; V
BE
= 0 V; T
amb
= 25 °C - - 100 nA
I
EBO
emitter-base cut-off
current
V
EB
= 7 V; I
C
= 0 A; T
amb
= 25 °C - - 100 nA
V
CE
= 10 V; I
C
= 500 mA; t
p
≤ 300 µs;
δ ≤ 0.02 ; T
amb
= 25 °C; pulsed
150 250 -
V
CE
= 10 V; I
C
= 1 A; t
p
≤ 300 µs;
δ ≤ 0.02 ; T
amb
= 25 °C; pulsed
80 250 -
V
CE
= 10 V; I
C
= 2 A; t
p
≤ 300 µs;
δ ≤ 0.02 ; T
amb
= 25 °C; pused
20 100 -
h
FE
DC current gain
V
CE
= 10 V; I
C
= 3 A; t
p
≤ 300 µs;
δ ≤ 0.02 ; T
amb
= 25 °C; pulsed
10 40 -
I
C
= 1 A; I
B
= 50 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
- 90 150 mVV
CEsat
collector-emitter
saturation voltage
I
C
= 3 A; I
B
= 300 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
- 225 330 mV
I
C
= 1 A; I
B
= 50 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
- 90 150 mΩR
CEsat
collector-emitter
saturation resistance
I
C
= 3 A; I
B
= 300 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
- 75 110 mΩ
I
C
= 1 A; I
B
= 50 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
- 0.86 1 VV
BEsat
base-emitter saturation
voltage
I
C
= 2 A; I
B
= 200 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
- 1 1.2 V
V
BEon
base-emitter turn-on
voltage
V
CE
= 2 V; I
C
= 0.1 A; T
amb
= 25 °C - 0.67 0.85 V
t
d
delay time - 20 - ns
t
r
rise time - 300 - ns
t
on
turn-on time - 320 - ns
t
s
storage time - 830 - ns
t
f
fall time - 470 - ns
t
off
turn-off time
V
CC
= 12.5 V; I
C
= 1 A; I
Bon
= 0.05 A;
I
Boff
= -0.05 A; T
amb
= 25 °C
- 1300 - ns
NXP Semiconductors
PHPT61003NY
100 V, 3 A NPN high power bipolar transistor
PHPT61003NY All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 11 September 2015 7 / 17
Symbol Parameter Conditions Min Typ Max Unit
f
T
transition frequency V
CE
= 10 V; I
C
= 100 mA; f = 100 MHz;
T
amb
= 25 °C
- 140 - MHz
C
c
collector capacitance V
CB
= 10 V; I
E
= 0 A; i
e
= 0 A;
f = 1 MHz; T
amb
= 25 °C
- 11 - pF
aaa-010261
200
100
300
400
h
FE
0
I
C
(mA)
10
-1
10
4
10
3
1 10
2
10
(1)
(3)
(2)
V
CE
= 10 V
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 4. DC current gain as a function of collector
current; typical values
V
CE
(V)
0 542 31
aaa-010267
1
2
3
I
C
(A)
0
40
35
45
20
2
5
3
0
15
10
5
I
B
=
5
0
m
A
T
amb
= 25 °C
Fig. 5. Collector current as a function of collector-
emitter voltage; typical values
NXP Semiconductors
PHPT61003NY
100 V, 3 A NPN high power bipolar transistor
PHPT61003NY All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 11 September 2015 8 / 17
I
C
(mA)
10
-1
10
5
10
4
10
3
1 10
2
10
aaa-010262
0.4
0.8
1.2
V
BE
(V)
0
(1)
(3)
(2)
V
CE
= 2 V
(1) T
amb
= −55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig. 6. Base-emitter voltage as a function of collector
current; typical values
I
C
(mA)
10
-1
10
5
10
4
10
3
1 10
2
10
aaa-010265
0.6
1.0
1.4
V
BEsat
(V)
0.2
(1)
(3)
(2)
I
C
/I
B
= 20
(1) T
amb
= −55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig. 7. Base-emitter saturation voltage as a function of
collector current; typical values
aaa-010263
10
-1
10
-2
1
V
CEsat
(V)
10
-3
I
C
(mA)
10
-1
10
4
10
3
1 10
2
10
(1)
(2)
(3)
I
C
/I
B
= 20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 8. Collector-emitter saturation voltage as a
function of collector current; typical values
aaa-010264
I
C
(mA)
10
-1
10
4
10
3
1 10
2
10
10
-2
10
-1
1
10
V
CEsat
(V)
10
-3
(1)
(3)
(2)
T
amb
= 25 °C
(1) I
C
/I
B
= 50
(2) I
C
/I
B
= 20
(3) I
C
/I
B
= 10
Fig. 9. Collector-emitter saturation voltage as a
function of collector current; typical values
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18

PHPT61003NYX

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Nexperia
Description:
Bipolar Transistors - BJT NPN High Power BipolarTransistor
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