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PHPT61003NYX

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18
NXP Semiconductors
PHPT61003NY
100 V, 3 A NPN high power bipolar transistor
PHPT61003NY All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 11 September 2015 9 / 17
I
C
(mA)
10
-1
10
4
10
3
1 10
2
10
aaa-010266
1
10
-1
10
2
10
10
3
R
CEsat
(Ω)
10
-2
(1)
(2)
(3)
I
C
/I
B
= 20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 10. Collector-emitter saturation resistance as a
function of collector current; typical values
I
C
(mA)
10
-1
10
4
10
3
1 10
2
10
aaa-010268
1
10
-1
10
2
10
10
3
R
CEsat
(Ω)
10
-2
(1)
(3)
(2)
T
amb
= 25 °C
(1) I
C
/I
B
= 50
(2) I
C
/I
B
= 20
(3) I
C
/I
B
= 10
Fig. 11. Collector-emitter saturation resistance as a
function of collector current; typical values
NXP Semiconductors
PHPT61003NY
100 V, 3 A NPN high power bipolar transistor
PHPT61003NY All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 11 September 2015 10 / 17
11. Test information
006aaa003
I
Bon
(100 %)
I
B
input pulse
(idealized waveform)
I
Boff
90 %
10 %
I
C
(100 %)
I
C
t
d
t
on
90 %
10 %
t
r
output pulse
(idealized waveform)
t
f
t
t
s
t
off
Fig. 12. BISS transistor switching time definition
R
C
R2
R1
DUT
mlb826
V
o
R
B
(probe)
450 Ω
(probe)
450 Ω
oscilloscope
oscilloscope
V
BB
V
I
V
CC
Fig. 13. Test circuit for switching times
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
NXP Semiconductors
PHPT61003NY
100 V, 3 A NPN high power bipolar transistor
PHPT61003NY All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 11 September 2015 11 / 17
12. Package outline
References
Outline
version
European
projection
Issue date
IEC JEDEC JEITA
SOT669
MO-235
sot669_po
11-03-25
13-02-27
Unit
(1)
mm
max
nom
min
1.20
1.01
0.15
0.00
0.25
0.50
0.35
4.41
3.62
2.2
2.0
6.2
5.8
0.85
0.40
A
Dimensions (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads SOT669
A
1
A
2
1.10
0.95
A
3
b b
2
b
3
0.1
L
2
w y
8
°
0
°
θ
b
4
c c
2
D
(1)
D
1
(1)
E
(1)
E
1
(1)
3.3
3.1
e
1.27
H L
0.25
0.19
0.30
0.24
4.20 1.3
0.8
0.25
0.9
0.7
4.10
3.80
5.0
4.8
1.3
0.8
L
1
A C
1/2 e
w A
0 5 mm
scale
e
E
1
b
c
2
A
2
1
2 3 4
mounting
base
D
1
c
E
b
2
b
3
b
4
H
D
L
2
L
1
C
X
y C
q
(A
3
)
L
A
A
1
detail X
Fig. 14. Package outline LFPAK56; Power-SO8 (SOT669)
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18

PHPT61003NYX

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Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT NPN High Power BipolarTransistor
Lifecycle:
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