85222AMI-02LF

ICS85222I-02 Data Sheet 1-TO-2, LVCMOS/LVTTL -TO- DIFFERENTIAL HSTL TRANSLATOR
ICS85222AMI-02 APRIL 25, 2014 7 ©2014 Integrated Device Technology, Inc.
Power Considerations
This section provides information on power dissipation and junction temperature for the ICS85222I-02.
Equations and example calculations are also provided.
1. Power Dissipation.
The total power dissipation for the ICS85222I-02 is the sum of the core power plus the power dissipated in the load(s).
The following is the power dissipation for V
DD
= 3.3V + 5% = 3.465V, which gives worst case results.
NOTE: Please refer to Section 3 for details on calculating power dissipated in the load.
Power (core)
MAX
= V
DD_MAX
* I
DD_MAX
= 3.465V * 50mA = 173.25mW
Power (outputs)
MAX
= 82.3mW/Loaded Output pair
If all outputs are loaded, the total power is 2 x 82.3mW = 164.6mW
Total Power_
MAX
(3.465V, with all outputs switching) = 173.3mW + 164.6mW = 337.85mW
2. Junction Temperature.
Junction temperature, Tj, is the temperature at the junction of the bond wire and bond pad and directly affects the reliability of the device. The
maximum recommended junction temperature is 125°C.
The equation for Tj is as follows: Tj =
JA
* Pd_total + T
A
Tj = Junction Temperature
JA
= Junction-to-Ambient Thermal Resistance
Pd_total = Total Device Power Dissipation (example calculation is in section 1 above)
T
A
= Ambient Temperature
In order to calculate junction temperature, the appropriate junction-to-ambient thermal resistance
JA
must be used. Assuming no air flow and
a multi-layer board, the appropriate value is 103°C/W per Table 5 below.
Therefore, Tj for an ambient temperature of 85°C with all outputs switching is:
85°C + 0.338W * 103°C/W = 119.8°C. This is below the limit of 125°C.
This calculation is only an example. Tj will obviously vary depending on the number of loaded outputs, supply voltage, air flow and the type of
board (single layer or multi-layer).
Table 5. Thermal Resitance
JA
for 8-Lead SOIC, Forced Convection
JA
by Velocity
Meters per Second 012.5
Multi-Layer PCB, JEDEC Standard Test Boards 103°C/W 94°C/W 89°C/W
ICS85222I-02 Data Sheet 1-TO-2, LVCMOS/LVTTL -TO- DIFFERENTIAL HSTL TRANSLATOR
ICS85222AMI-02 APRIL 25, 2014 8 ©2014 Integrated Device Technology, Inc.
3. Calculations and Equations.
The purpose of this section is to derive the power dissipated into the load.
HSTL output driver circuit and termination are shown in Figure 2.
Figure 2. HSTL Driver Circuit and Termination
To calculate worst case power dissipation into the load, use the following equations which assume a 50 load.
Pd_H is power dissipation when the output drives high.
Pd_L is the power dissipation when the output drives low.
Pd_H = (V
OH_MAX
/R
L
) * (V
DDO_MAX
- V
OH_MAX
)
Pd_L = (V
OL_MAX
/R
L
) * (V
DDO_MAX
- V
OL_MAX
)
Pd_H = (1.4V/50) * (3.465V - 1.4V) = 57.8mW
Pd_L = (0.4V/50) * (3.465V - 0.4V) = 24.52mW
Total Power Dissipation per output pair = Pd_H + Pd_L = 82.3mW
V
OUT
V
DD
Q1
RL
50
Ω
ICS85222I-02 Data Sheet 1-TO-2, LVCMOS/LVTTL -TO- DIFFERENTIAL HSTL TRANSLATOR
ICS85222AMI-02 APRIL 25, 2014 9 ©2014 Integrated Device Technology, Inc.
Reliability Information
Table 6.
JA
vs. Air Flow Table for a 8-Lead SOIC
Transistor Count
The transistor count for ICS85222i-02 is: 411
JA
by Velocity
Meters per Second 012.5
Multi-Layer PCB, JEDEC Standard Test Boards 103°C/W 94°C/W 89°C/W

85222AMI-02LF

Mfr. #:
Manufacturer:
IDT
Description:
Translation - Voltage Levels Dual LVCMOS Translator 2 Input
Lifecycle:
New from this manufacturer.
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