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SI4829DY-T1-GE3

P1-P3P4-P6P7-P9P10-P10
Vishay Siliconix
Si4829DY
Document Number: 68760
S09-2109-Rev. B, 12-Oct-09
www.vishay.com
1
P-Channel 20-V (D-S) MOSFET with Schottky Diode
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage (MOSFET)
V
DS
- 20
VReverse Voltage (Schottky)
V
KA
30
Gate-Source Voltage (MOSFET)
V
GS
± 12
Continuous Drain Current (T
J
= 150 °C) (MOSFET)
T
C
= 25 °C
I
D
- 2
a
A
T
C
= 70 °C - 2
a
T
A
= 25 °C
- 2
a, b, c
T
A
= 70 °C
- 2
a, b, c
Pulsed Drain Current
(MOSFET)
I
DM
- 7
Continuous Source-Drain Diode Current
(MOSFET Diode Conduction)
T
C
= 25 °C
I
S
- 2.2
T
A
= 25 °C
- 1.4
b, c
Average Forward Current (Schottky)
I
F
2
b
Maximum Power Dissipation (MOSFET)
T
C
= 25 °C
P
D
3.1
W
T
C
= 70 °C 2
T
A
= 25 °C
2
b, c
T
A
= 70 °C
1.3
b, c
Maximum Power Dissipation (Schottky)
T
C
= 25 °C 2.3
T
C
= 70 °C 1.5
T
A
= 25 °C
1.7
b, c
T
A
= 70 °C
1.1
b, c
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
A K
A K
S D
G D
SO-8
5
6
7
8
Top View
2
3
4
1
Ordering Information: Si4829DY-T1-E3 (Lead (Pb)-free)
Si4829DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
K
A
S
G
D
P-
C
hannel M
OS
FET
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)
I
D
(A)
a
Q
g
(Typ.)
- 20
0.215 at V
GS
= - 4.5 V - 2
2.6 nC
0.320 at V
GS
= - 2.5 V - 2
SCHOTTKY PRODUCT SUMMARY
V
KA
(V)
V
f
(V)
Diode Forward Voltage
I
F
(A)
a
30 0.44 at 1 A 2
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• LITTLE FOOT
®
Plus Schottky
• 100 % R
g
Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch for Portable Devices
• DC/DC Buck Converter
www.vishay.com
2
Document Number: 68760
S09-2109-Rev. B, 12-Oct-09
Vishay Siliconix
Si4829DY
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
f. Maximum under Steady State conditions is 110 °C/W.
g. Maximum under Steady State conditions is 110 °C/W.
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient (MOSFET)
b, f
R
thJA
55 62.5
°C/W
Maximum Junction-to-Foot (Drain) (MOSFET)
R
thJF
30 40
Maximum Junction-to-Ambient (Schottky)
b, g
R
thJA
57 75
Maximum Junction-to-Foot (Drain) (Schottky)
R
thJF
42 55
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= - 250 µA
- 20 V
V
DS
Temperature Coefficient ΔV
DS
/T
J
I
D
= - 250 µA
- 19
mV/°C
V
GS(th)
Temperature Coefficient ΔV
GS(th)
/T
J
3
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= - 250 µA
- 0.6 - 1.5 V
Gate-Source Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 12 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 20 V, V
GS
= 0 V
- 1
µA
V
DS
= - 20 V, V
GS
= 0 V, T
J
= 55 °C
- 10
On-State Drain Current
a
I
D(on)
V
DS
≤ - 5 V, V
GS
= - 10 V - 7 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 4.5 V, I
D
= - 2.5 A
0.175 0.215
Ω
V
GS
= - 2.5 V, I
D
= - 1.0 A
0.260 0.320
Forward Transconductance
a
g
fs
V
DS
= - 10 V, I
D
= - 2.5 A
5S
Dynamic
b
Input Capacitance
C
iss
V
DS
= - 10 V, V
GS
= 0 V, f = 1 MHz
210
pFOutput Capacitance
C
oss
55
Reverse Transfer Capacitance
C
rss
40
Total Gate Charge
Q
g
V
DS
= - 10 V, V
GS
= - 10 V, I
D
= - 2.5 A
5.2 8
nC
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 2.5 A
2.6 4
Gate-Source Charge
Q
gs
0.53
Gate-Drain Charge
Q
gd
0.9
Gate Resistance
R
g
f = 1 MHz 7 14 Ω
Tur n - O n D e l ay Time
t
d(on)
V
DD
= - 10 V, R
L
= 5 Ω
I
D
≅ - 2 A, V
GEN
= - 4.5 V, R
g
= 1 Ω
20 30
ns
Rise Time
t
r
45 70
Turn-Off DelayTime
t
d(off)
15 25
Fall Time
t
f
10 15
Tur n - O n D e l ay Time
t
d(on)
V
DD
= - 10 V, R
L
= 5 Ω
I
D
≅ - 2 A, V
GEN
= - 10 V, R
g
= 1 Ω
510
Rise Time
t
r
12 20
Turn-Off DelayTime
t
d(off)
15 25
Fall Time
t
f
10 15
Document Number: 68760
S09-2109-Rev. B, 12-Oct-09
www.vishay.com
3
Vishay Siliconix
Si4829DY
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I
S
T
C
= 25 °C
- 2
A
Pulse Diode Forward Current
I
SM
- 7
Body Diode Voltage
V
SD
I
S
= - 2 A, V
GS
= 0 V
- 1 - 1.4 V
Body Diode Reverse Recovery Time
t
rr
I
F
= - 2 A, dI/dt = 100 A/µs, T
J
= 25 °C
20 30 ns
Body Diode Reverse Recovery Charge
Q
rr
14 20 nC
Reverse Recovery Fall Time
t
a
14
ns
Reverse Recovery Rise Time
t
b
6
SCHOTTKY SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Forward Voltage Drop
V
F
I
F
= 1 A
0.36 0.44
V
I
F
= 1 A, T
J
= 125 °C
0.29 0.35
Maximum Reverse Leakage Current
I
rm
V
R
= 20 V
0.025 0.200
mA
V
R
= 20 V, T
J
= 75 °C
0.41 4
V
R
= 20 V, T
J
= 125 °C
550
Junction Capacitance
C
T
V
R
= 15 V
60 pF
P1-P3P4-P6P7-P9P10-P10

SI4829DY-T1-GE3

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Buy SI4829DY-T1-GE3
Manufacturer:
Vishay
Description:
MOSFET P-CH 20V 2A 8-SOIC
Lifecycle:
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