www.vishay.com
6
Document Number: 68760
S09-2109-Rev. B, 12-Oct-09
Vishay Siliconix
Si4829DY
MOSFET TYPICAL CHARACTERISTICS T
A
= 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
1
2
3
4
5
6
7
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
V
GS
=5V thru 3.5 V
V
GS
=2V
V
GS
=1.5V
V
GS
=3V
V
GS
=2.5V
0.0
0.1
0.2
0.3
0.4
0.5
01234567
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
V
GS
=2.5V
V
GS
=4.5V
0
2
4
6
8
10
0123456
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
I
D
=2.5A
V
DS
=16V
V
DS
=10V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
1
2
3
4
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
C
rss
0
70
140
210
280
350
048 12 16 20
C
iss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
oss
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
- 50 - 25 0 25 50 75 100 125 150
T
J
-Junction Temperature (°C)
(Normalized)
- On-Resistance
R
DS(on)
V
GS
=4.5V,I
D
=2.5A
V
GS
=2.5V,I
D
=0.3A
