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SI4829DY-T1-GE3

P1-P3P4-P6P7-P9P10-P10
Vishay Siliconix
Si4829DY
Document Number: 68760
S09-2109-Rev. B, 12-Oct-09
www.vishay.com
7
MOSFET TYPICAL CHARACTERISTICS T
A
= 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
1
V
SD
-Source-to-Drain Voltage (V)
- Source Current (A)I
S
0.1
10
T
J
= 150 °C
T
J
= 25 °C
0.5
0.6
0.7
0.
8
0.9
1.0
1.1
1.2
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
(V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.0
0.1
0.2
0.3
0.4
0.5
012345
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 25 °C
T
J
= 125 °C
I
D
=2.5A
0
4
8
12
16
20
Power (W)
Time (s)
10 10000.10.010.001 1001
Single Pulse Power
Safe Operating Area, Junction-to-Ambient
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
- Drain Current (A)I
D
10
0.1
0.1 1 10
1
T
A
= 25 °C
Single Pulse
1ms
10 ms
100 ms
0.01
1s
10 s
DC
BVDSS Limited
100
100 µs
Limited byR
DS(on)
*
I
DM
Limited
I
D(on)
Limited
www.vishay.com
8
Document Number: 68760
S09-2109-Rev. B, 12-Oct-09
Vishay Siliconix
Si4829DY
MOSFET TYPICAL CHARACTERISTICS T
A
= 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
1
2
3
4
0 255075100125150
T
C
- Case Temperature (°C)
I
D
- Drain Current (A)
Package Limited
Power Derating
0
1
2
3
4
25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power Dissipation (W)
Vishay Siliconix
Si4829DY
Document Number: 68760
S09-2109-Rev. B, 12-Oct-09
www.vishay.com
9
MOSFET TYPICAL CHARACTERISTICS T
A
= 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68760
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1
10
100010
-1
10
-4
100
0.2
0.1
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
=110 °C/W
3. T
JM
-T
A
=P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
Single Pulse
0.02
0.05
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3
10
-2
01110
-1
10
-4
0.2
0.1
Duty Cycle = 0.5
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
0.05
0.02
Single Pulse
P1-P3P4-P6P7-P9P10-P10

SI4829DY-T1-GE3

Mfr. #:
Buy SI4829DY-T1-GE3
Manufacturer:
Vishay
Description:
MOSFET P-CH 20V 2A 8-SOIC
Lifecycle:
New from this manufacturer.
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