DS18B20
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ABSOLUTE MAXIMUM RATINGS
Voltage Range on Any Pin Relative to Ground .................................................................. -0.5V to +6.0V
Operating Temperature Range ....................................................................................... -55°C to +125°C
Storage Temperature Range ........................................................................................... -55°C to +125°C
Solder Temperature ..................................................... Refer to the IPC/JEDEC J-STD-020 Specification.
These are stress ratings only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods of time may affect reliability.
DC ELECTRICAL CHARACTERISTICS (-55°C to +125°C; V
DD
=3.0V to 5.5V)
Voltage
V
PU
V 1,2
Error
t
ERR
°C 3
Input Logic-High V
IH
Local Power
+2.2
The lower of
5.5
or
V
DD
+ 0.3
V 1, 6
Parasite Power +3.0
DQ
µA
NOTES:
1) All voltages are referenced to ground.
2) The Pullup Supply Voltage specification assumes that the pullup device is ideal, and therefore the
high level of the pullup is equal to V
PU
. In order to meet the V
IH
spec of the DS18B20, the actual
supply rail for the strong pullup transistor must include margin for the voltage drop across the
transistor when it is turned on; thus: V
PU_ACTUAL
= V
PU_IDEAL
+ V
TRANSISTOR
.
3) See typical performance curve in Figure 17.
4) Logic-low voltages are specified at a sink current of 4mA.
5) To guarantee a presence pulse under low voltage parasite power conditions, V
ILMAX
may have to be
reduced to as low as 0.5V.
6) Logic-high voltages are specified at a source current of 1mA.
7) Standby current specified up to +70°C. Standby current typically is 3µA at +125°C.
8) To minimize I
DDS
, DQ should be within the following ranges: GND ≤ DQ ≤ GND + 0.3V or
V
DD
– 0.3V ≤ DQ ≤ V
DD
.
9) Active current refers to supply current during active temperature conversions or EEPROM writes.
10) DQ line is high (“high-Z” state).
11) Drift data is based on a 1000-hour stress test at +125°C with V
DD
= 5.5V.
