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SI5424DC-T1-GE3

P1-P3P4-P6P7-P9P10-P11
Vishay Siliconix
Si5424DC
www.vishay.com
4
Document Number: 73776
S13-0297-Rev. C, 11-Feb-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
0.001
0.1
0.01
1
10
20
T
A
= 150 °C
T
A
= 25 °C
V
SD
-Source-to-Drain Voltage (V)
- Source Current (A)I
S
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
(V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.00
0.01
0.02
0.03
0.04
0.05
0.06
02468 10
I
D
= 4.8 A
T
A
= 25 °C
T
A
= 125 °C
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
0
30
50
10
20
Power (W)
Time (s)
40
1 100 6001010
-1
10
-2
10
-3
Safe Operating Area, Junction-to-Ambient
10 ms
100 ms
DC
1 s
10 s
1 ms
0.001
100
1
00111.0
0.01
10
0.1
10
T
A
= 25 C
Single Pulse
BVDSS Limited
Limited by R
DS(on)
*
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
-DrainCurrent (A)
I
D
Vishay Siliconix
Si5424DC
Document Number: 73776
S13-0297-Rev. C, 11-Feb-13
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
Power Derating
0
2
4
6
8
0 25 50 75 100 125 150
Power Dissipation (W)
T
C
- Case Temperature (°C)
Vishay Siliconix
Si5424DC
www.vishay.com
6
Document Number: 73776
S13-0297-Rev. C, 11-Feb-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73776
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
00601110
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 80 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3
10
-2
01110
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
P1-P3P4-P6P7-P9P10-P11

SI5424DC-T1-GE3

Mfr. #:
Buy SI5424DC-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 30V Vds 25V Vgs 1206-8 ChipFET
Lifecycle:
New from this manufacturer.
Delivery:
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