SI5424DC-T1-GE3

SI5424DC-T1-GE3
Mfr. #:
SI5424DC-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 30V Vds 25V Vgs 1206-8 ChipFET
Lifecycle:
New from this manufacturer.
Datasheet:
SI5424DC-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI5424DC-T1-GE3 DatasheetSI5424DC-T1-GE3 Datasheet (P4-P6)SI5424DC-T1-GE3 Datasheet (P7-P9)SI5424DC-T1-GE3 Datasheet (P10-P11)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
ChipFET-8
Tradename:
TrenchFET
Packaging:
Reel
Height:
1.1 mm
Length:
3.05 mm
Series:
SI54
Width:
1.65 mm
Brand:
Vishay / Siliconix
Product Type:
MOSFET
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Part # Aliases:
SI5424DC-GE3
Unit Weight:
0.002998 oz
Tags
SI5424, SI542, SI54, SI5
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***nell
N CHANNEL MOSFET, 30V, 6A, 1206, FULL RE
***et
Trans MOSFET N-CH 30V 6A 8-Pin Chip FET T/R
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:6000mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.03ohm; Rds(on) Test Voltage, Vgs:25V; Threshold Voltage, Vgs Typ:2.3V; Power Dissipation, Pd:2.5W ;RoHS Compliant: Yes
Part # Mfg. Description Stock Price
SI5424DC-T1-GE3
DISTI # V72:2272_09216193
Vishay IntertechnologiesTrans MOSFET N-CH 30V 6A 8-Pin Chip FET T/R
RoHS: Compliant
2869
  • 1000:$0.3028
  • 500:$0.3850
  • 250:$0.4277
  • 100:$0.4753
  • 25:$0.5674
  • 10:$0.6934
  • 1:$0.7943
SI5424DC-T1-GE3
DISTI # V36:1790_09216193
Vishay IntertechnologiesTrans MOSFET N-CH 30V 6A 8-Pin Chip FET T/R
RoHS: Compliant
0
  • 3000:$0.4636
SI5424DC-T1-GE3
DISTI # SI5424DC-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 30V 6A 1206-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
3398In Stock
  • 1000:$0.3115
  • 500:$0.3893
  • 100:$0.4925
  • 10:$0.6420
  • 1:$0.7300
SI5424DC-T1-GE3
DISTI # SI5424DC-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 30V 6A 1206-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
3398In Stock
  • 1000:$0.3115
  • 500:$0.3893
  • 100:$0.4925
  • 10:$0.6420
  • 1:$0.7300
SI5424DC-T1-GE3
DISTI # SI5424DC-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 30V 6A 1206-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
3000In Stock
  • 30000:$0.2394
  • 15000:$0.2457
  • 6000:$0.2551
  • 3000:$0.2741
SI5424DC-T1-GE3
DISTI # 32675129
Vishay IntertechnologiesTrans MOSFET N-CH 30V 6A 8-Pin Chip FET T/R
RoHS: Compliant
2869
  • 24:$0.7943
SI5424DC-T1-GE3
DISTI # SI5424DC-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 6A 8-Pin Chip FET T/R - Tape and Reel (Alt: SI5424DC-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$0.4349
  • 18000:$0.4469
  • 12000:$0.4599
  • 6000:$0.4799
  • 3000:$0.4939
SI5424DC-T1-GE3
DISTI # 16P3770
Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 6A, 1206, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.03ohm,Rds(on) Test Voltage Vgs:25V,Threshold Voltage Vgs:2.3V RoHS Compliant: Yes0
  • 1:$0.5190
  • 3000:$0.5190
SI5424DC-T1-GE3
DISTI # 781-SI5424DC-GE3
Vishay IntertechnologiesMOSFET 30V Vds 25V Vgs 1206-8 ChipFET
RoHS: Compliant
3731
  • 1:$0.8400
  • 10:$0.6760
  • 100:$0.5130
  • 500:$0.4240
  • 1000:$0.3390
  • 3000:$0.3070
  • 6000:$0.2860
  • 9000:$0.2770
SI5424DC-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 25V Vgs 1206-8 ChipFET
RoHS: Compliant
Americas -
    SI5424DC-T1-GE3
    DISTI # 2478958
    Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 6A, 1206, FULL RE
    RoHS: Compliant
    0
    • 12000:$0.7090
    • 6000:$0.8830
    • 3000:$1.1600
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    Availability
    Stock:
    Available
    On Order:
    1986
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