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FGH40T120SQDNL4

P1-P3P4-P6P7-P9P10-P10
© Semiconductor Components Industries, LLC, 2017
March, 2018 − Rev. 1
1 Publication Order Number:
FGH40T120SQDNL4/D
FGH40T120SQDNL4
IGBT - Ultra Field Stop
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Ultra Field Stop Trench construction, and provides
superior performance in demanding switching applications, offering
both low on−state voltage and minimal switching loss. The IGBT is
well suited for UPS and solar applications. Incorporated into the device
is a soft and fast co−packaged free wheeling diode with a low forward
voltage.
Features
• Extremely Efficient Trench with Field Stop Technology
• T
Jmax
= 175°C
• Soft Fast Reverse Recovery Diode
• Optimized for High Speed Switching
• These are Pb−Free Devices
Typical Applications
• Solar Inverter
• Uninterruptible Power Inverter Supplies (UPS)
• Welding
ABSOLUTE MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−emitter voltage V
CES
1200 V
Collector current
@ T
C = 25°C
@ TC = 100°C
I
C
160
40
A
Pulsed collector current, T
pulse
limited by T
Jmax
I
CM
160 A
Diode forward current
@ T
C = 25°C
@ TC = 100°C
I
F
160
40
A
Diode pulsed current, T
pulse
limited
by T
Jmax
I
FM
160 A
Gate−emitter voltage
Transient gate−emitter voltage
(T
pulse
= 5 ms, D < 0.10)
V
GE
±20
±30
V
Power Dissipation
@ T
C = 25°C
@ TC = 100°C
P
D
454
227
W
Operating junction temperature range T
J
−55 to +175 °C
Storage temperature range T
stg
−55 to +175 °C
Lead temperature for soldering, 1/8″
from case for 5 seconds
T
SLD
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
TO−247−4L
CASE 340CJ
E
C
40 A, 1200 V
V
CEsat
= 1.7 V
E
off
= 1.1 mJ
G
Device Package Shipping
ORDERING INFORMATION
FGH40T120SQDNL4 TO−247
(Pb−Free)
30 Units / Rail
www.onsemi.com
MARKING DIAGRAM
G
E
C
E
FGH40T120
SQDNL4
FGH40T120SQDNL4
www.onsemi.com
2
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal resistance junction−to−case, for IGBT
R
q
JC
0.33 °C/W
Thermal resistance junction−to−case, for Diode
R
q
JC
0.61 °C/W
Thermal resistance junction−to−ambient
R
q
JA
40 °C/W
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter
Test Conditions Symbol Min Typ Max Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
GE
= 0 V, I
C
= 500 mA
V
(BR)CES
1200
1250*
− − V
Collector−emitter saturation voltage V
GE
= 15 V, I
C
= 40 A
V
GE
= 15 V, I
C
= 40 A, T
J
= 175°C
V
CEsat
−
−
1.78
2.3
1.95
−
V
Gate−emitter threshold voltage
V
GE
= V
CE
, I
C
= 400 mA
V
GE(th)
4.5 5.5 6.5 V
Collector−emitter cut−off current, gate−
emitter short−circuited
V
GE
= 0 V, V
CE
= 1200 V
V
GE
= 0 V, V
CE
= 1200 V, T
J
=
175°C
I
CES
−
−
−
0.6
0.4
−
mA
Gate leakage current, collector−emitter
short−circuited
V
GE
= 20 V , V
CE
= 0 V I
GES
− − 200 nA
* Guaranteed by design.
Input capacitance
V
CE
= 20 V, V
GE
= 0 V, f = 1 MHz
C
ies
− 5000 −
pF
Output capacitance C
oes
− 140 −
Reverse transfer capacitance C
res
− 80 −
Gate charge total
V
CE
= 600 V, I
C
= 40 A, V
GE
= 15 V
Q
g
− 221 −
nC
Gate to emitter charge Q
ge
− 52 −
Gate to collector charge Q
gc
− 100 −
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
T
J
= 25°C
V
CC
= 600 V, I
C
= 40 A
R
g
= 10 W
V
GE
= 0 to 15V
t
d(on)
− 46 −
ns
Rise time t
r
− 33 −
Turn−off delay time t
d(off)
− 220 −
Fall time t
f
− 56 −
Turn−on switching loss E
on
− 1.4 −
mJ
Turn−off switching loss E
off
− 1.1 −
Total switching loss E
ts
− 2.5 −
Turn−on delay time
T
J
= 175°C
V
CC
= 600 V, I
C
= 40 A
R
g
= 10 W
V
GE
= 0 to 15 V
t
d(on)
− 47 −
ns
Rise time t
r
− 33 −
Turn−off delay time t
d(off)
− 240 −
Fall time t
f
− 132 −
Turn−on switching loss E
on
− 2.7 −
mJ
Turn−off switching loss E
off
− 1.8 −
Total switching loss E
ts
− 4.5 −
DIODE CHARACTERISTIC
Forward voltage
V
GE
= 0 V, I
F
= 40 A
V
GE
= 0 V, I
F
= 40 A, T
J
= 175°C
V
F
−
−
3.4
3.1
3.8
−
V
Reverse recovery time
T
J
= 25°C
I
F
= 40 A, V
R
= 400 V
di
F
/dt = 500 A/ms
t
rr
− 166 − ns
Reverse recovery charge Q
rr
− 0.78 −
mc
Reverse recovery current I
rrm
− 9.0 − A
Reverse recovery time
T
J
= 125°C
I
F
= 40 A, V
R
= 400 V
di
F
/dt = 500 A/ms
t
rr
− 390 − ns
Reverse recovery charge Q
rr
− 4.0 −
mc
Reverse recovery current I
rrm
− 20 − A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
FGH40T120SQDNL4
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Output Characteristics Figure 2. Output Characteristics
V
CE
, COLLECTOR−EMITTER VOLTAGE (V) V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
76543210
0
20
40
60
80
100
140
160
76543210
0
20
40
60
100
120
140
160
Figure 3. Output Characteristics Figure 4. Output Characteristics
V
CE
, COLLECTOR−EMITTER VOLTAGE (V) V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
76543210
0
20
40
60
100
120
140
160
76543210
0
20
40
60
100
120
140
160
Figure 5. Typical Transfer Characteristics Figure 6. V
CE(sat)
vs. T
J
V
GE
, GATE−EMITTER VOLTAGE (V) T
J
, JUNCTION TEMPERATURE (°C)
1412106420
0
20
40
60
80
100
140
160
1751257525−25−75
1.0
2.0
3.0
3.5
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
8
120
11 V
10 V
9 V
8 V
7 V
T
J
= 25°C
V
GE
= 20 V − 13 V
11 V
10 V
9 V
8 V
7 V
T
J
= 150°C
V
GE
= 20 V − 13 V
11 V
10 V
9 V
7 V and 8 V
T
J
= −55°C
V
GE
=
20 V − 13 V
11 V
10 V
9 V
8 V
7 V
T
J
= 175°C
V
GE
= 20 V − 13 V
8
80
8
80
8
80
T
J
= 25°C
T
J
= 175°C
8
120
I
C
= 75 A
1.5
2.5
I
C
= 40 A
I
C
= 20 A
−50 0 20015010050
P1-P3P4-P6P7-P9P10-P10

FGH40T120SQDNL4

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Manufacturer:
ON Semiconductor
Description:
IGBT Transistors IGBT 1200V 40A UFS
Lifecycle:
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