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FGH40T120SQDNL4

P1-P3P4-P6P7-P9P10-P10
FGH40T120SQDNL4
www.onsemi.com
4
TYPICAL CHARACTERISTICS
Figure 7. Typical Capacitance Figure 8. Diode Forward Characteristics
V
CE
, COLLECTOR−EMITTER VOLTAGE (V) V
F
, FORWARD VOLTAGE (V)
908060504020100
10
100
1000
10,000
3.02.5 4.52.01.51.00.50
0
10
30
40
60
70
80
100
Figure 9. Typical Gate Charge Figure 10. Switching Loss vs. Temperature
Q
G
, GATE CHARGE (nC) T
J
, JUNCTION TEMPERATURE (°C)
250200150100500
0
2
6
8
10
14
16
1801401201006040200
0.3
0.8
1.3
1.8
2.3
2.8
Figure 11. Switching Time vs. Temperature Figure 12. Switching Loss vs. IC
T
J
, JUNCTION TEMPERATURE (°C) I
C
, COLLECTOR CURRENT (A)
1801601201006040200
1
10
100
1000
8070605040302010
0
1
3
5
6
CAPACITANCE (pF)
I
F
, FORWARD CURRENT (A)
V
GE
, GATE−EMITTER VOLTAGE (V)
SWITCHING LOSS (mJ)
SWITCHING TIME (ms)
SWITCHING LOSS (mJ)
30 70 100
T
J
= 25°C
C
oes
C
ies
C
res
20
50
90
T
J
= 25°C
T
J
= 175°C
4
12
V
CE
= 600 V
V
GE
= 15 V
I
C
= 40 A
80 160 200
V
CE
= 600 V
V
GE
= 15 V
I
C
= 40 A
Rg = 10 W
E
off
E
on
V
CE
= 600 V
V
GE
= 15 V
T
J
= 175°C
Rg = 10 W
E
off
E
on
90
2
4
80 140 200
V
CE
= 600 V
V
GE
= 15 V
I
C
= 40 A
Rg = 10 W
t
d(off)
t
d(on)
t
r
t
f
3.5 4.0
FGH40T120SQDNL4
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5
TYPICAL CHARACTERISTICS
Figure 13. Switching Time vs. IC Figure 14. Switching Loss vs. RG
I
C
, COLLECTOR CURRENT (A)
R
G
, GATE RESISTOR (W)
8070605040302010
1
10
100
1000
605040 703020100
0
1
2
3
4
5
7
8
Figure 15. Switching Time vs. RG Figure 16. Switching Loss vs. V
CE
R
G
, GATE RESISTOR (W)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
60 7050403020100
10
100
1000
750700650600500450400350
0
0.5
1.0
1.5
2.0
3.0
3.5
4.0
Figure 17. Switching Time vs. V
CE
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
700650600550500450400350
10
100
1000
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
V
CE
= 600 V
V
GE
= 15 V
T
J
= 175°C
Rg = 10 W
E
off
E
on
t
d(off)
t
d(on)
t
r
t
f
90
V
CE
= 600 V
V
GE
= 15 V
T
J
= 175°C
I
C
= 40 A
6
550 800
E
off
E
on
V
GE
= 15 V
T
J
= 175°C
I
C
= 40 A
Rg = 10 W
V
CE
= 600 V
V
GE
= 15 V
T
J
= 175°C
I
C
= 40 A
t
d(off)
t
d(on)
t
r
t
f
V
GE
= 15 V
T
J
= 175°C
I
C
= 40 A
Rg = 10 W
t
d(off)
t
d(on)
t
r
t
f
750
9
10
2.5
Figure 18. Safe Operating Area
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
1K100101
0.1
100
1000
I
C
, COLLECTOR CURRENT (A)
10K800
10
1
50 ms
100 ms
1 ms
dc operation
Single Nonrepetitive
Pulse T
C
= 25°C
Curves must be derated
linearly with increase
in temperature
FGH40T120SQDNL4
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6
TYPICAL CHARACTERISTICS
Figure 19. Reverse Bias Safe Operating Area Figure 20. t
rr
vs. di
F
/dt
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
di
F
/dt, DIODE CURRENT SLOPE (A/ms)
1K100101
1
10
100
1000
900700 1100500300100
0
50
100
150
250
Figure 21. Q
rr
vs. di
F
/dt Figure 22. I
rm
vs. di
F
/dt
di
F
/dt, DIODE CURRENT SLOPE (A/ms) di
F
/dt, DIODE CURRENT SLOPE (A/ms)
900 1100700500300100
0
1.0
3.5
900700300100
0
10
20
40
50
Figure 23. V
F
vs. T
J
T
J
, JUNCTION TEMPERATURE (°C)
1007550250−25−50−75
1.0
2.0
4.5
I
C
, COLLECTOR CURRENT (A)
t
rr
, REVERSE RECOVERY TIME (ns)
Q
rr
, REVERSE RECOVERY CHARGE (mC)
I
rm
, REVERSE RECOVERY CURRENT (A)
V
F
, FORWARD VOLTAGE (V)
10K
200
500 1100
150
300
350
30
200
V
GE
= 15 V, T
C
= 175°C
T
J
= 25°C, I
F
= 40 A
T
J
= 175°C, I
F
= 40 A
T
J
= 25°C, I
F
= 40 A
T
J
= 175°C, I
F
= 40 A
T
J
= 25°C, I
F
= 40 A
T
J
= 175°C, I
F
= 40 A
0.5
1.5
2.5
2.0
3.0
I
C
= 75 A
I
C
= 40 A
I
C
= 20 A
1.5
125 175
2.5
3.0
3.5
4.0
V
R
= 400 V
V
R
= 400 V
V
R
= 400 V
P1-P3P4-P6P7-P9P10-P10

FGH40T120SQDNL4

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Manufacturer:
ON Semiconductor
Description:
IGBT Transistors IGBT 1200V 40A UFS
Lifecycle:
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