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FGH40T120SQDNL4

P1-P3P4-P6P7-P9P10-P10
FGH40T120SQDNL4
www.onsemi.com
7
TYPICAL CHARACTERISTICS
Figure 24. Collector Current vs. Switching Frequency
0.01 0.1 1 10 100 1000
180
FREQUENCY (kHz)
Ipk (A)
V
CE
= 600 V,
R
gate
= 10 W,
V
GE
= 15 V
160
140
120
100
80
60
40
20
0
T
C
= 80°C
T
C
= 80°C
T
C
= 110°C
T
C
= 110°C
Ramp
Square
Figure 25. IGBT Transient Thermal Impedance
PULSE TIME (sec)
R(t), SQUARE−WAVE PEAK (°C/W)
Figure 26. Diode Transient Thermal Impedance
PULSE TIME (sec)
50% Duty Cycle
20%
10%
5%
2%
Single Pulse
50% Duty Cycle
20%
10%
5%
2%
Single Pulse
0.0001
0.01
0.1
1
0.000001 0.00001 0.0001 0.001 0.01 0.1 1
R
q
JC
= 0.33
0.01
0.1
1
0.000001 0.00001 0.0001 0.001 0.01 0.1 1
R
q
JC
= 0.61
Junction
Case
C
1
C
2
R
1
R
2
R
n
Duty Factor = t
1
/t
2
Peak T
J
= P
DM
x Z
q
JC
+ T
C
C
n
C
i
(J/W)
0.0154
0.0039
0.0539
0.0314
0.0897
1.8437
R
i
(°C/W)
0.0065
0.0811
0.0186
0.1007
0.1115
0.0172
0.001
R(t), SQUARE−WAVE PEAK (°C/W)
Junction
Case
C
1
C
2
R
1
R
2
R
n
Duty Factor = t
1
/t
2
Peak T
J
= P
DM
x Z
q
JC
+ T
C
C
n
C
i
(J/W)
0.000090
0.000661
0.002014
0.002059
0.005527
0.031996
R
i
(°C/W)
0.011089
0.015127
0.015703
0.048571
0.057211
0.031254
0.117443
0.129731
0.225628
0.551763
0.026926
0.077082
0.140155
0.181237
FGH40T120SQDNL4
www.onsemi.com
8
Figure 27. Test Circuit for Switching Characteristics
Figure 28. Definition of Turn On Waveform
FGH40T120SQDNL4
www.onsemi.com
9
Figure 29. Definition of Turn Off Waveform
P1-P3P4-P6P7-P9P10-P10

FGH40T120SQDNL4

Mfr. #:
Buy FGH40T120SQDNL4
Manufacturer:
ON Semiconductor
Description:
IGBT Transistors IGBT 1200V 40A UFS
Lifecycle:
New from this manufacturer.
Delivery:
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