LNJ424C46RA
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Product Specification
13 3
■ Product Summary
Type Amber Light Emitting Diode (3528 Package size Type Chip LED)
Application Indicators
Material InGaAlP
■ Absolute Maximum Ratings
Item Symbol Ratings Unit Remarks
Power dissipation P
D
80 mW
Forward current I
F
30 mA
Pulse forward current
(Note1)
I
FP
90 mA
Reverse voltage V
R
4 V
Operating ambient
temperature
Topr -40 ～ +100 ℃
Storage temperature Tstg -40 ～ +100 ℃
(Note1) The condition of I
FP
is duty 10 %, pulse width 1 ms
Please contact us for further information regarding special operating conditions such as
I
F
：less than DC =1 mA
I
FP
：less than pulse width =1 ms, duty=10 %
■ Electrical-Optical Characteristics (Ta=25 ℃±3 ℃)
Item Symbol Condition Min. Typ. Max. Unit
Luminous intensity
(Note2)
I
O
I
F
=20 mA DC 140 230 380 mcd
Reverse current I
R
V
R
=4 V － － 100 μA
Forward voltage V
F
I
F
=20 mA DC － 2.1 2.5 V
Dominant emission
wavelength (Note3)
λd I
F
=20 mA DC 584 589 596 nm
Peak emission wavelength λp I
F
=20 mA DC － 595 － nm
Spectral half band width ⊿λ I
F
=20 mA DC － 20 － nm
(Note2) Rank classification of luminous intensity. (Condition：I
F
=20 mA DC)
Rank Luminous intensity Unit
1
140 ～ 200
2
200 ～ 270
3
270 ～ 380
mcd
･Measurement tolerance is ±15 %.
･Luminous intensity standard is equal to NIST.
(Note3) Rank classification of dominant emission wavelength. (Condition：I
F
=20 mA DC)
Rank Dominant emission wavelength Unit
L
584 ～ 590
H
590 ～ 596
nm
･Measurement tolerance is ±2 nm.
2011-04-05
Established Revised
Semiconductor Company, Panasonic Corporation
