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BTS426L1

P1-P3P4-P6P7-P9P10-P12P13-P14
PROFET
®
BTS426L1
Semiconductor Group 1 of 14 2003-Oct-01
Smart Highside Power Switch
Features
•
Overload protection
•
Current limitation
•
Short circuit protection
•
Thermal shutdown
•
Overvoltage protection (including load dump)
•
Fast demagnetization of inductive loads
•
Reverse battery protection
1
)
•
Undervoltage and overvoltage shutdown with auto-restart
and hysteresis
•
Open drain diagnostic output
•
Open load detection in ON-state
•
CMOS compatible input
•
Loss of ground and loss of V
bb
protection
•
Electrostatic discharge (ESD) protection
Application
•
µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
•
All types of resistive, inductive and capacitve loads
•
Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically
integrated in Smart SIPMOS
technology. Providing embedded protective functions.
+ V
bb
IN
ST
Signal GND
ESD
PROFET
OUT
GND
Logic
Voltage
sensor
Voltage
source
Charge pump
Level shifter
Temperature
sensor
Rectifier
Limit for
unclamped
ind. loads
Gate
protection
Current
limit
2
4
1
3
5
Load GND
Load
V
Logic
Overvoltage
protection
GND
R
O
Open load
detection
Short to Vbb
1)
With external current limit (e.g. resistor R
GND
=150 Ω) in GND connection, resistor in series with ST connection, reverse load
current limited by connected load.
Product Summary
Overvoltage protection V
bb(AZ)
43 V
Operating voltage
V
bb(on)
5.0 ... 34 V
On-state resistance R
ON
60
mΩ
Load current (ISO) I
L(ISO)
7.0 A
Current limitation I
L(SCr)
16 A
TO-220AB/5
5
Standard
1
5
Straight leads
1
5
SMD
BTS426L1
Semiconductor Group 2 2003-Oct-01
Pin Symbol Function
1 GND - Logic ground
2 IN I Input, activates the power switch in case of logical high signal
3 V
bb
+ Positive power supply voltage,
the tab is shorted to this pin
4 ST S Diagnostic feedback, low on failure
5 OUT
(Load, L)
O Output to the load
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter Symbol Values Unit
Supply voltage (overvoltage protection see page 3) V
bb
43 V
Supply voltage for full short circuit protection
T
j Start
=-40 ...+150°C
V
bb
34 V
Load dump protection
2)
V
LoadDump
= U
A
+ V
s
, U
A
= 13.5 V
R
I
3)
= 2 Ω, R
L
= 1.7 Ω, t
d
= 200 ms, IN= low or high
V
Load dump
4
)
60 V
Load current (Short circuit current, see page 4) I
L
self-limited A
Operating temperature range
Storage temperature range
T
j
T
stg
-40 ...+150
-55 ...+150
°C
Power dissipation (DC), T
C
≤ 25 °C P
tot
75 W
Inductive load switch-off energy dissipation, single pulse
V
bb
= 12V, T
j,start
= 150°C, T
C
= 150°C const.
I
L
= 7.0 A, Z
L
= 24 mH, 0 Ω:
E
AS
0.74 J
Electrostatic discharge capability (ESD) IN:
(Human Body Model) all other pins:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
V
ESD
1.0
2.0
kV
Input voltage (DC) V
IN
-10 ... +16 V
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 6
I
IN
I
ST
±2.0
±5.0
mA
Thermal Characteristics
Parameter and Conditions Symbol Values Unit
min typ max
Thermal resistance chip - case:
junction - ambient (free air):
R
thJC
R
thJA
--
--
--
--
1.67
75
K/W
SMD version, device on PCB
5)
:
34
2)
Supply voltages higher than V
bb(AZ)
require an external current limit for the GND and status pins, e.g. with a 150 Ω resistor in the
GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the protection of the input is integrated.
3)
R
I
= internal resistance of the load dump test pulse generator
4)
V
Load dump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
5)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70µm thick) copper area for V
bb
connection. PCB is vertical
without blown air.
BTS426L1
Semiconductor Group 3 2003-Oct-01
Electrical Characteristics
Parameter and Conditions Symbol Values Unit
at Tj = 25 °C, V
bb
= 12 V unless otherwise specified
min typ max
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
I
L
= 2 A T
j
=25 °C:
T
j
=150 °C:
R
ON
--
50
100
60
120
mΩ
Nominal load current, ISO Norm (pin 3 to 5)
V
ON
= 0.5 V, T
C
= 85 °C
I
L(ISO)
5.8 7.0
-- A
Output current (pin 5) while GND disconnected or GND pulled
up, V
bb
=30 V, V
IN
= 0, see diagram page 7
I
L(GNDhigh)
-- -- 10 mA
Turn-on time IN to 90% V
OUT
:
Turn-off time IN to 10% V
OUT
:
R
L
= 12 Ω, T
j
=-40...+150°C
t
on
t
off
80
80
200
230
400
450
µs
Slew rate on
10 to 30% V
OUT
, R
L
= 12 Ω, T
j
=-40...+150°C
dV /dt
on
0.1 -- 1 V/µs
Slew rate off
70 to 40% V
OUT
, R
L
= 12 Ω, T
j
=-40...+150°C
-dV/dt
off
0.1 -- 1 V/µs
Operating Parameters
Operating voltage
6)
T
j
=-40...+150°C: V
bb(on)
5.0 -- 34 V
Undervoltage shutdown T
j
=-40...+150°C: V
bb(under)
3.5 -- 5.0 V
Undervoltage restart T
j
=-40...+25°C:
T
j
=+150°C:
V
bb(u rst)
-- -- 5.0
7.0
V
Undervoltage restart of charge pump
see diagram page 12 T
j
=-40...+150°C:
V
bb(ucp)
-- 5.6 7.0 V
Undervoltage hysteresis ∆V
bb(under)
= V
bb(u rst)
- V
bb(under)
∆V
bb(under)
-- 0.2 -- V
Overvoltage shutdown T
j
=-40...+150°C: V
bb(over)
34 -- 43 V
Overvoltage restart T
j
=-40...+150°C: V
bb(o rst)
33 -- -- V
Overvoltage hysteresis T
j
=-40...+150°C: ∆V
bb(over)
-- 0.5 -- V
Overvoltage protection
7)
T
j
=-40...+150°C:
I
bb
=40 mA
V
bb(AZ)
42 47 -- V
Standby current (pin 3)
V
IN
=0 T
j
=-40...+25°C:
T
j
= 150°C:
I
bb(off)
--
--
10
12
25
28
µA
Leakage output current (included in I
bb(off)
)
VIN=0
I
L(off)
-- -- 12 µA
Operating current (Pin 1)
8)
, V
IN
=5 V,
Tj
=-40...+150°C
I
GND
-- 1.8 3.5 mA
6)
At supply voltage increase up to V
bb
= 5.6 V typ without charge pump, V
OUT
≈V
bb
- 2 V
7)
See also V
ON(CL)
in table of protection functions and circuit diagram page 7.
8)
Add I
ST
, if I
ST
> 0, add I
IN
, if V
IN
>5.5 V
P1-P3P4-P6P7-P9P10-P12P13-P14

BTS426L1

Mfr. #:
Buy BTS426L1
Manufacturer:
Infineon Technologies
Description:
IC HIGH SIDE PWR SWITCH TO220-5
Lifecycle:
New from this manufacturer.
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