BTS426L1
Semiconductor Group 7 2003-Oct-01
Status output
ST
GND
ESD-
ZD
+5V
R
ST(ON)
ESD-Zener diode: 6.1 V typ., max 5 mA; R
ST(ON)
< 380 at 1.6
mA, ESD zener diodes are not to be used as voltage clamp at DC
conditions. Operation in this mode may result in a drift of the zener
voltage (increase of up to 1 V).
Inductive and overvoltage output clamp
+ V
bb
OUT
GND
PROFET
V
Z
V
ON
V
ON
clamped to 47 V typ.
Overvolt. and reverse batt. protection
+ V
bb
IN
ST
ST
R
IN
R
GND
GND
R
Signal GND
Logic
PROFET
V
Z2
I
R
V
Z1
V
Z1
= 6.2 V typ., V
Z2
= 47 V typ., R
GND
= 150 , R
ST
= 15 k,
R
I
= 3.5 k typ.
Open-load detection
ON-state diagnostic condition: V
ON
< R
ON
* I
L(OL)
; IN high
Open load
detection
Logic
unit
+ V
bb
OUT
ON
V
ON
OFF-state diagnostic condition: V
OUT
> 3 V typ.; IN low
Open load
detection
Logic
unit
V
OUT
Signal GND
R
EXT
R
O
OFF
GND disconnect
PROFET
V
IN
ST
OUT
GND
bb
V
bb
1
2
4
3
5
V
IN
V
ST
V
GND
Any kind of load. In case of Input=high is V
OUT
V
IN
- V
IN(T+)
.
Due to V
GND
>0, no V
ST
= low signal available.
BTS426L1
Semiconductor Group 8 2003-Oct-01
GND disconnect with GND pull up
PROFET
V
IN
ST
OUT
GND
bb
V
bb
1
2
4
3
5
V
GND
V
IN
V
ST
Any kind of load. If V
GND
> V
IN
- V
IN(T+)
device stays off
Due to V
GND
>0, no V
ST
= low signal available.
V
bb
disconnect with energized inductive load
PROFET
V
IN
ST
OUT
GND
bb
V
bb
1
2
4
3
5
high
Normal load current can be handled by the PROFET itself.
V
bb
disconnect with charged external inductive
load
PROFET
V
IN
ST
OUT
GND
bb
1
2
4
3
5
V
bb
high
S
D
If other external inductive loads L are connected to the PROFET, additional
elements like D are necessary.
Inductive Load switch-off energy dissipation
PROFET
V
IN
ST
OUT
GND
bb
=
E
E
E
E
AS
bb
L
R
E
Load
L
R
L
{Z
L
Energy stored in load inductance:
E
L
=
1
/
2
·L·I
2
L
While demagnetizing load inductance, the energy dissipated in
PROFET is
E
AS
= E
bb
+ E
L
- E
R
=
V
ON(CL)
·i
L
(t) dt,
with an approximate solution for R
L
> 0 :
E
AS
=
I
L
· L
2
·R
L
·(V
bb
+ |V
OUT(CL)
|)· ln (1+
I
L
·R
L
|V
OUT(CL)
|
)
Maximum allowable load inductance for
a single switch off
L = f (I
L
); T
j,start
=
150°C,T
C
=
150°C const.,
V
bb
=
12 V, R
L
=
0
L [mH]
1
10
100
1000
10000
2 7 12 17
I
L
[A]
BTS426L1
Semiconductor Group 9 2003-Oct-01
Typ. transient thermal impedance chip case
Z
thJC
= f(t
p
)Z
thJC
[K/W]
0.01
0.1
1
10
1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1
0
0.01
0.02
0.05
0.1
0.2
0.5
D=
t
p
[s]
Transient thermal impedance chip ambient air
Z
thJA
= f(t
p
)Z
thJA
[K/W]
0.1
1
10
100
1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1 1E2 1E3
0
0.01
0.02
0.05
0.1
0.2
0.5
D=
t
p
[s]

BTS426L1

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
IC HIGH SIDE PWR SWITCH TO220-5
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet