204Pin DDR3 1.35V 1600 SO-DIMM
4GB Based on 512Mx8
AQD-SD3L4GN16-MG
Differential Data strobes
Clock Input. (Differential pair)
On-die termination control line
Data masks/high data strobes
Command/address reference
supply
I2C serial bus address select for
EEPROM
I2C serial bus clock for EEPROM
I2C serial bus data for EEPROM
SDRAM I/O termination supply
Description
AQD-SD3L4GN16-MG is a DDR3 SO-DIMM, non-ECC,
high-speed, low power memory module that use 8 pcs
of 512Mx8bits DDR3 low voltage SDRAM in FBGA
package and a 2048 bits serial EEPROM on a 204-pin
printed circuit board. AQD-SD3L4GN16-MG is a Dual
In-Line Memory Module and is intended for mounting
into 204-pin edge connector sockets.
Synchronous design allows precise cycle control with the
use of system clock. Data I/O transactions are possible
on both edges of DQS. Range of operation frequencies,
programmable latencies allow the same device to be
useful for a variety of high bandwidth, high performance
memory system applications.
Features
RoHS compliant products.
JEDEC standard 1.35V(1.283V~1.45V) Power supply
JEDEC standard 1.5V(1.425V~1.575V) Power supply
VDDQ=1.35V(1.28V~1.45V) & 1.5V(1.425V~1.575V)
Clock Freq: 800MHZ for 1600Mb/s/Pin.
Programmable CAS Latency: 6, 7, 8, 9, 10, 11
Programmable Additive Latency (Posted /CAS):
0,CL-2 or CL-1 clock
Programmable /CAS Write Latency (CWL)
= 8(DDR3-1600)
8 bit pre-fetch
Burst Length: 4, 8
Bi-directional Differential Data-Strobe
Internal calibration through ZQ pin
On Die Termination with ODT pin
Serial presence detect with EEPROM
Asynchronous reset
Pin Identification