AQD-SD3L4GN16-MG

204Pin DDR3 1.35V 1600 SO-DIMM
4GB Based on 512Mx8
AQD-SD3L4GN16-MG
Advantech
11
0
SERIAL PRESENCE DETECT SPECIFICATION
AQD-SD3L4GN16-MG Serial Presence Detect
Byte No.
Function Described
Standard Specification
Vendor Part
0
Number of serial PD bytes written/SPD device
size/CRC coverage
CRC 0-116/256/176
92
1
SPD revision
Revision 1.0
10
2
Key byte/DRAM device type
DDR3 SDRAM
0B
3
Key byte/module type
SODIMM
03
4
SDRAM density and banks
4G bits, 8 banks
04
5
SDRAM addressing
16 rows, 10 columns
21
6
Module Nominal Voltage,VDD
Standard = 1.35V
02
7
Module organization
1 rank / x8 bits
01
8
Module memory bus width
64 bits / non-ECC
03
9
Fine timebase (FTB) dividend/divisor
5 / 2
52
10
Medium timebase (MTB) dividend
1
01
11
Medium timebase (MTB) divisor
8
08
12
SDRAM minimum cycle time (tCK (min.))
1.25ns
0A
13
Reserved
00
14
SDRAM /CAS latencies supported, LSB
CL=6,7,8,9,10,11
FC
15
SDRAM /CAS latencies supported, MSB
Not support over CL=12
00
16
SDRAM minimum /CAS latencies time (tAA (min.))
13.125ns
69
17
SDRAM write recovery time (tWR)
15ns
78
18
SDRAM minimum /RAS to /CAS delay (tRCD)
13.125ns
69
19
SDRAM minimum row active to row active delay
(tRRD)
6ns
30
20
SDRAM minimum row precharge time (tRP)
13.125ns
69
21
SDRAM upper nibbles for tRAS and tRC
Refer to Byte22,23
11
22
SDRAM minimum active to precharge time (tRAS),
LSB
35ns
18
23
SDRAM minimum active to active /auto- refresh time
(tRC), LSB
48.125ns
81
24
SDRAM minimum refresh recovery time delay (tRFC),
LSB
260ns
20
25
SDRAM minimum refresh recovery time delay (tRFC),
MSB
260ns
08
26
SDRAM minimum internal write to read command
delay (tWTR)
7.5ns
3C
27
SDRAM minimum internal read to precharge command
delay (tRTP)
7.5ns
3C
28
Upper nibble for tFAW
Refer to Byte29
00
29
Minimum four activate window delay time (tFAW (min.))
30ns
F0
30
SDRAM output drivers supported
DLL-Off Mode
Support/RZQ/6,7
83
31
SDRAM refresh options
PASR / ASR / Normal
Temp
85
32
Module Thermal SENSOR
not incorporated
00
33
SDRAM Device Type
Standard
00
34~59
Reserved
00
204Pin DDR3 1.35V 1600 SO-DIMM
4GB Based on 512Mx8
AQD-SD3L4GN16-MG
Advantech
11
1
60
Module nominal height
29 < height 30mm
0F
61
Module maximum thickness
thickness 4 mm
11
62
Reference raw card used
Raw Card B
01
63
Address mapping from edge connecter to DRAM
0 = standard
00
64~116
Module specific section
00
117
Module ID: manufacturer’s JEDEC ID code, LSB
Apacer
01
118
Module ID: manufacturer’s JEDEC ID code, MSB
Apacer
7A
119
Module ID: manufacturing location
00
120
Module ID: manufacturing date
Year code (BCD)
00
121
Module ID: manufacturing date
Week code (BCD)
00
122-125
Module ID: module serial number
00
126
Cyclical redundancy code (CRC)
FE
127
Cyclical redundancy code (CRC)
51
128
Module part number
A
41
129
Module part number
Q
51
130
Module part number
D
44
131
Module part number
2D
132
Module part number
S
53
133
Module part number
D
44
134
Module part number
3
33
135
Module part number
L
4C
136
Module part number
4
34
137
Module part number
G
47
138
Module part number
N
4E
139
Module part number
1
31
140
Module part number
6
36
141
Module part number
2D
142
Module part number
M
4D
143
Module part number
G
47
144
Module part number
20
145
Module part number
20
146
Module revision code
00
147
Module revision code
00
148
SDRAM manufacturer’s JEDEC ID code, LSB
00
149
SDRAM manufacturer’s JEDEC ID code, MSB
00
150-175
Manufacturer's specific data
00
176-255
Open for customer use
00

AQD-SD3L4GN16-MG

Mfr. #:
Manufacturer:
Advantech
Description:
Memory Modules 4G SO-DDR3-1600 512X8 1.35V MIC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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