FOD3181TV Datasheet FOD3181TV, FOD3181S, FOD3181SD | P1-P3

FOD3181 — 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler

FOD3181 Rev. 1.0.8

August 2008

FOD3181

0.5A Ouput Current, High Speed MOSFET Gate Driver

Optocoupler

Features

■

Guaranteed operating temperature range of -20°C to

+85°C

■

0.5A minimum peak output current

■

High speed response: 500ns max propagation delay

over temperature range

■

Wide V

CC

operating range: 10V to 20V

■

5000Vrms, 1 minute isolation

■

Minimum creepage distance of 7.0mm

■

Minimum clearance distance of 7.0mm

■

C-UL, UL and VDE* approved

■

10kV/µs minimum common mode rejection (CMR) at

V

CM

= 1,500V

■

R

DS(ON)

of 1.5

Ω

(typ.) offers lower power dissipation

Applications

■

Plasma Display Panel

■

High performance DC/DC convertor

■

High performance switch mode power supply

■

High performance uninterruptible power supply

■

Isolated Power MOSFET gate drive

*Requires ‘V’ ordering option

Description

The FOD3181 is a 0.5A Output Current, High Speed

MOSFET Gate Drive Optocoupler. It consists of a

gallium aluminum arsenide (AlGaAs) light emitting diode

optically coupled to a CMOS integrated circuit with a

power stage. The power stage consists of a PMOS pull-

up and a NMOS pull-down power transistor. It is ideally

suited for high frequency driving of MOSFETs used in

Plasma Display Panels (PDPs),

motor control invertor

applications, and high performance

DC/DC converters.

The device is packaged in an 8-pin dual in-line housing

compatible with 260°C reflow processes for lead free

solder compliance.

Functional Block Diagram Package Outlines

1

2

3

4

8

7

6

5

FOD3181

NO CONNECTION

ANODE

CATHODE

NO CONNECTION

VCC

OUTPUT

VEE

Note:

A 0.1µF bypass capacitor must be connected between pins 5 and 8

.

8

1

8

1

FOD3181 Rev. 1.0.8 2

FOD3181 — 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be

operable above the recommended operating conditions and stressing the parts to these levels is not recommended.

In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.

The absolute maximum ratings are stress ratings only.

Recommended Operating Conditions

The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended

operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not

recommend exceeding them or designing to absolute maximum ratings.

Symbol Parameter Value Units

T

STG

Storage Temperature -40 to +125 °C

T

OPR

Operating Temperature -20 to +85 °C

T

J

Junction Temperature -20 to +125 °C

T

SOL

Lead Solder Temperature 260 for 10 sec. °C

I

F(AVG)

Average Input Current

(1)

25 mA

I

F(tr)

Minimum Rate of Rise of LED Current 250 ns

I

F(TRAN)

Peak Transient Input Current (<1µs pulse width, 300pps) 1.0 A

V

R

Reverse Input Voltage 5 V

I

OH(PEAK)

“High” Peak Output Current

(2)

1.5 A

I

OL(PEAK)

“Low” Peak Output Current

(2)

1.5 A

V

CC

– V

EE

Supply Voltage -0.5 to 25 V

V

O(PEAK)

Output Voltage 0 to V

CC

V

P

O

Output Power Dissipation

(4)

250 mW

P

D

Total Power Dissipation

(4)

300 mW

Symbol Parameter Value Units

V

CC

– V

EE

Power Supply 10 to 20 V

I

F(ON)

Input Current (ON) 12 to 18 mA

V

F(OFF)

Input Voltage (OFF) 0 to 0.8 V

T

OPR

Operating Temperature -20 to +85 °C

FOD3181 Rev. 1.0.8 3

FOD3181 — 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler

Electrical-Optical Characteristics (DC)

(T

A

= -20°C to +70°C)

Over recommended operating conditions unless otherwise speciﬁed.

Switching Characteristics

(T

A

= -20°C to +70°C)

Over recommended operating conditions unless otherwise speciﬁed.

Isolation Characteristics

(T

A

= -20°C to +70°C)

* All typical values at T

A

= 25°C

Symbol

Parameter

Test Conditions Min. Typ.* Max. Unit

I

OH

High Level Output Current

(2)(3)

V

OH

= (V

CC

– V

EE

– 1V) 0.5 A

I

OL

Low Level Output Current

(2)(3)

V

OL

= (V

CC

– V

EE

– 1V) 0.5 A

V

OH

High Level Output Voltage

(5)(6)

I

O

= -100mA V

CC

– 0.5 V

V

OL

Low Level Output Voltage

(5)(6)

I

O

= 100mA V

EE

+ 0.5 V

I

CCH

High Level Supply Current Output Open

I

F

= 7 to 10mA

4.8 6.0 mA

I

CCL

Low Level Supply Current Output Open

V

F

= 0 to 0.8V

5.0 6.0 mA

I

FLH

Threshold Input Current Low to High I

O

= 0mA, V

O

> 5V 10 mA

V

FHL

Threshold Input Voltage High to Low I

O

= 0mA, V

O

< 0.5V 0.8 V

V

F

Input Forward Voltage I

F

= 10mA 1.2 1.5 1.8 V

∆

V

F

/T

A

Temperature Coefﬁcient of

Forward Voltage

I

F

= 10mA -1.5 mV/°C

BV

R

Input Reverse Breakdown Voltage I

R

= 10µA 5 V

C

IN

Input Capacitance f = 1MHz, V

F

= 0V 60 pF

Symbol

Parameter

Test Conditions Min. Typ.* Max. Unit

t

PLH

Propagation Delay Time to High

Output Level

(7)

I

F

= 10mA, R

g

= 10

Ω

, f = 250kHz,

Duty Cycle = 50%, C

g

= 10nF

50 135 500 ns

t

PHL

Propagation Delay Time to Low

Output Level

(7)

50 105 500 ns

t

r

Rise Time C

L

= 10nF, R

g

= 10

Ω

75 ns

t

f

Fall Time 55 ns

| CM

H

| Output High Level Common

Mode Transient Immunity

(8)(9)

T

A

= +25°C, I

f

= 7 to 10mA,

V

CM

= 1.5kV, V

CC

= 20V

10 kV/µs

| CM

L

| Output Low Level Common

Mode Transient Immunity

(8)(10)

T

A

= +25°C, V

f

= 0V, V

CM

= 1.5kV,

V

CC

= 20V

10 kV/µs

Symbol

Parameter

Test Conditions Min. Typ.* Max. Unit

V

ISO

Withstand Isolation Voltage

(11)(12)

T

A

= 25°C, R.H. < 50%,

t = 1min., I

I-O

≤ 20 µA

5000 V

rms

R

I-O

Resistance (input to output)

(12)

V

I-O

= 500V 10

11

Ω

C

I-O

Capacitance (input to output) Freq. = 1MHz 1 pF

FOD3181TV

FOD3181TV

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