FOD3181TV Datasheet FOD3181TV, FOD3181S, FOD3181SD | P10-P12

FOD3181 Rev. 1.0.8 10

FOD3181 — 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler

Reflow Profile

Output Power Derating

The maximum package power dissipation is 295mW. The

package is limited to this level to ensure that under normal

operating conditions and over extended temperature

range that the semiconductor junction temperatures do

not exceed 125°C. The package power is composed of

three elements; the LED, static operating power of the

output IC, and the power dissipated in the output power

MOSFET transistors. The power rating of the output IC is

250mW. This power is divided between the static power of

the integrated circuit, which is the product of I

times the

power supply voltage (V

– V

). The maximum IC

static output power is 150mW, (V

– V

) = 25V, I

6mA. This maximum condition is valid over the opera-

tional temperature range of -40°C to +100°C. Under these

maximum operating conditions, the output of the power

MOSFET is allowed to dissipate 100mW of power.

The absolute maximum output power dissipation versus

ambient temperature is shown in Figure 12. The output

driver is capable of supplying 100mW of output power

over the temperature range from -40°C to 87°C. The out-

put derates to 90mW at the absolute maximum operating

temperature of 100°C.

The output power is the product of the average output

current squared times the output transistor’s R

DS(ON)

O(AVG)

= I

O(AVG)

2 • R

DS(ON)

The I

O(AVG)

is the product of the duty factor times the

peak current flowing in the output. The duty factor is

the ratio of the ‘on’ time of the output load current divided

by the period of the operating frequency. An R

DS(ON)

2.0Ω results in an average output load current of 200mA.

The load duty factor is a ratio of the average output time

of the power MOSFET load circuit and period of the driv-

ing frequency.

The maximum permissible, operating frequency is deter-

mined by the load supplied to the output at its resulting

output pulse width. Figure 13 shows an example of a

0.03µF gate to source capacitance with a series resis-

tance of 40Ω. This reactive load results in a composite

average pulse width of 1.5µs. Under this load condition it

is not necessary to derate the absolute maximum output

current out to 250kHz.

• Peak reflow temperature: 260 C (package surface temperature)

• Time of temperature higher than 183 C for 160 seconds or less

• One time soldering reflow is recommended

245 C, 10–30 s

Time (Minute)

300

250

200

150

100

0.5 1 1.5 2 2.5 3 3.5 4 4.5

Temperature (°C)

Time above 183 C, <160 sec

Ramp up = 2–10

C/sec

260

C peak

Fig. 12 Absolute Maximum Power Dissipation

vs. Ambient Temperature

– AMBIENT TEMPERATURE (°C)

-40 -20 0 20 40 60 80 85

POWER DISSIPATION (W)

0.15

0.1

0.05

– V

= Max. = 25V

= 6mA

LED Power = 45mW

F – FREQUENCY (kHz)

– PEAK OUTPUT CURRENT (A)

0.5

1.5

110250

Fig. 13 Output Current Derating vs. Frequency

= -40°C to 100°C

Load = 0.03µF + 40Ω

= 20V

= 12mA

LED Duty Factor = 50%

Output Pulse Width = 1.5µs

FOD3181 Rev. 1.0.8 11

FOD3181 — 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler

and I

Test Conditions

This device is tested and specified when driving a com-

plex reactive load. The load consists of a capacitor in the

series with a current limiting resistor. The capacitor rep-

resents the gate to source capacitance of a power

MOSFET transistor. The test load is a 0.03uF capacitor

in series with an 40Ω resistor. The LED test frequency is

10.0kHz with a 50% duty cycle. The combined I

and

output load current duty factor is 0.6% at the test

frequency.

Figure 14 illustrates the relationship of the LED input

drive current and the device’s output voltage and sourc-

ing and sinking currents. The 0.03µF capacitor load rep-

resents the gate to source capacitance of a very large

power MOSFET transistor. A single supply voltage of

20V is used in the evaluation.

Figure 15 shows the test schematic to evaluate the out-

put voltage and sourcing and sinking capability of the

device. The I

and I

are measured at the peak of

their respective current pulses.

Figure 14. FOD 3180 Output Current and Output Voltage vs. LED Drive

Figure 15. Test Schematic

20V

= 8mA

P-Channel (ON)

= 0.5A

N-Channel (ON)

OFF

LED

OUTPUT

Load

Current

1µs/Div

MON

100Ω 100Ω

40Ω

0.1µF

22µF

0.33µF

Pulse

Generator

FOD3181

FOD3181 Rev. 1.0.8 12

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Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Datasheet contains the design specifications for product development. Specifications may change in

any manner without notice.

Preliminary First Production

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild

Semiconductor reserves the right to make changes at any time without notice to improve design.

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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes

at any time without notice to improve the design.

Obsolete Not In Production

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The

datasheet is for reference information only.

Rev. I35

FOD3181 — 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler

P1-P3 P4-P6 P7-P9 P10-P12

FOD3181TV

Mfr. #:

Buy FOD3181TV

Manufacturer:

ON Semiconductor / Fairchild

Description:

High Speed Optocouplers 0.5A Output Current Hi Spd MOSFET OPTO

Lifecycle:

New from this manufacturer.

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FOD3181TV

FOD3181TV

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