PROPRIETARY AND
CONFIDENTIAL
Microchip Technology Company
©2012 Silicon Storage Technology, Inc. DS75073B 06/12
Data Sheet
www.microchip.com
Features
• High Gain:
– Typically 30 dB gain across 2.4~2.5 GHz over tempera-
ture 0°C to +85°C
• High linear output power:
– >28 dBm P1dB
- Please refer to “Absolute Maximum Stress Ratings” on
page 6
– Meets 802.11g OFDM ACPR requirement up to 23.5
dBm
– ~3% added EVM up to 20 dBm for
54 Mbps 802.11g signal
– Meets 802.11b ACPR requirement up to 23.5 dBm
• High power-added efficiency/Low operating cur-
rent for both 802.11g/b applications
– ~34%/200 mA @ P
OUT
= 23.5 dBm for 802.11b/g
• Single-pin low I
REF
power-up/down control
–I
REF
<2 mA
• Low idle current
– ~85 mA I
CQ
for 12-contact XQFN
– ~65 mA I
CQ
for 6-contact XSON
• High-speed power-up/down
– Turn on/off time (10%- 90%) <100 ns
– Typical power-up/down delay with driver delay included
<200 ns
• Low Shut-down Current (~2 µA)
• High temperature stability
– ~1 dB gain/power variation between 0°C to +85°C
• Excellent On-chip power detection
• 20 dB dynamic range on-chip power detection
• Simple input/output matching
• Packages available
– 12-contact XQFN – 2mm x 2mm
– 6-contact XSON – 1.5mm x 1.5mm
• All non-Pb (lead-free) devices are RoHS compliant
Applications
• WLAN (IEEE 802.11b/g/n)
• Home RF
• Cordless phones
• 2.4 GHz ISM wireless equipment
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP08
The SST12LP08 is a versatile power amplifier based on the highly-reliable InGaP/
GaAs HBT technology. Easily configured for linear high-power applications with
excellent power-added efficiency while operating over the 2.4- 2.5 GHz frequency
band, it typically provides 30 dB gain with 34% power-added efficiency, while
meeting 802.11b/g spectrum mask at 23.5 dBm. The SST12LP08 also features
easy board-level usage along with high-speed power-up/down control through a
single combined reference voltage pin and is offered in both 12-contact XQFN
and 6-contact XSON packages.
