PROPRIETARY AND
CONFIDENTIAL
©2012 Silicon Storage Technology, Inc. DS75073B 06/12
7
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP08
Data Sheet
Microchip Technology Company
Table 4: DC Electrical Characteristics at 25°C
Symbol Parameter Min. Typ Max. Unit TestConditions
V
CC
Supply Voltage at pins 4, 8, 11 for 12-contact XQFN 2.75 3.3 4.2 V Figure 12
Supply Voltage at pins 1, 3, 6 for 6-contact XSON 2.75 3.3 4.2 V Figures 13 and 14
I
CQ
Idle current for 802.11g to meet EVM ~3% @ 20 dBm for
12-contact XQFN
85 mA Figure 12
Idle current for 802.11g to meet EVM ~3% @ 20 dBm for
6-contact XSON
65 mA Figure 13
Idle current for 802.11g to meet EVM ~3% @ 18 dBm for
6-contact XSON
48 mA Figure 14
I
CC
(802.11g)
Current consumption for 802.11g to meet EVM ~3% @
20 dBm for 12-contact XQFN
148 mA Figure 12
Current consumption for 802.11g to meet EVM ~3% @
20 dBm for 6-contact XSON
140 mA Figure 13
Current Consumption for 802.11g to meet EVM ~3% @
18 dBm for 6-contact XSON
95 mA Figure 14
I
CC
(802.11b/g)
Current consumption for 802.11b/g, 23.5 dBm for
12-contact XQFN
200 mA Figure 12
Current consumption for 802.11b/g, 23.5 dBm for
6-contact XSON
200 mA Figure 13
Current Consumption for 802.11b/g, 22 dBm for
6-contact XSON
140 mA Figure 14
V
REG
Reference Voltage for 12-contact XQFN with 75 resistor 2.75 2.85 2.95 V Figure 12
Reference Voltage for 6-contact XSON with 180 resistor 2.75 2.85 2.95 V Figure 13
Reference Voltage for 6-contact XSON with 390 resistor 2.75 2.85 2.95 V Figure 14
T4.2 75073
Table 5: AC Electrical Characteristics for Configuration at 25°C
Symbol Parameter Min. Typ Max. Unit
F
L-U
Frequency range 2412 2484 MHz
G Small signal gain 29 30 dB
G
VAR1
Gain variation over band (2412–2484 MHz) ±0.5 dB
G
VAR2
Gain ripple over channel (20 MHz) 0.2 dB
ACPR Meet 11b spectrum mask 23 dBm
Meet 11g OFDM 54 Mbps spectrum mask 23 dBm
Added EVM @ 20 dBm output with 11g OFDM 54 Mbps signal 3 %
2f, 3f, 4f, 5f Harmonics at 22 dBm, without external filters -40 dBc
T5.2 75073
