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VNLD5090TR-E
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
P19-P20
Electica
l specif
ications
VNLD
5090-E
10/20
DocID02
3206 Re
v 4
Figure
4. Switchin
g charact
eristics
T
able 12. T
ruth tab
le
Conditions
INPUT
DRAIN
ST
A
TUS
Norm
al op
erat
ion
L
H
H
L
H
H
Current li
mitation
L
H
H
X
H
H
Overte
mperature
L
H
H
H
H
L
Undervol
tag
e
L
H
H
H
X
X
DocID0
23206 R
ev 4
1
1/20
VNLD5090
-E
Application i
nformat
ion
19
3 Application
information
Figure 5. Application schematic
3.1
MCU I/O protection
ST s
uggests to in
sert
a resistor
(R
prot
) in li
ne to pre
vent the mi
crocontr
oller I/
O pins f
rom
latching up
(a)
. The value of th
ese re
sistor
s is a compr
omise be
tween the leak
age curr
ent of
microco
ntrolle
r and
the curre
nt requi
red by
the LSD I/O
s (input
level
s compatib
ility)
with the
latch-up
limit of m
icroc
ontroller
I/Os:
Equation 1
Let:
•
I
latchup
>
20 mA
•
V
OHµC
>
4.5 V
•
35
Ω ≤
R
prot
≤
100 K
Ω
("1($'5
,196833/
<
9
67
$
786
'5$,1
6285&(
5SURW
5
/
9FF
0LFUR&RQWUROOHU
5SURW
9
a.
In case
of negative transient on the
drain pin.
0.7
I
latchup
-----------------
--
-
R
prot
V
OH
μ
C
V
IH
–
()
I
IH max
-------------------
---------------
-----
-
≤≤
Application informat
ion
VNLD5090-E
12/20
DocID02
3206 Re
v 4
Then, t
he recom
mended
valu
e is R
prot
= 1 K
Ω
Figure 6
shows th
e turn-o
f
f cu
rrent drawn
during
the demagne
tization
.
Figure 6. Maximum demagnet
ization energy (V
CC
= 16 V)
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P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
P19-P20
VNLD5090TR-E
Mfr. #:
Buy VNLD5090TR-E
Manufacturer:
STMicroelectronics
Description:
Gate Drivers OMNIFET III fully protect lo-side drvr
Lifecycle:
New from this manufacturer.
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VNLD5090TR-E