IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXGA30N60C3C1 IXGP30N60C3C1
IXGH30N60C3C1
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
g
fs
I
C
= 20A, V
CE
= 10V, Note 1 9 16 S
C
ies
1075 pF
C
oes
V
CE
= 25V, V
GE
= 0V, f = 1MHz 196 pF
C
res
29 pF
Q
g
38 nC
Q
ge
I
C
= 20A, V
GE
= 15V, V
CE
= 0.5 • V
CES
8 nC
Q
gc
17 nC
t
d(on)
17 ns
t
ri
20 ns
E
on
0.12 mJ
t
d(off)
42 75 ns
t
fi
47 ns
E
off
0.09 0.18 mJ
t
d(on)
16 ns
t
ri
21 ns
E
on
0.16 mJ
t
d(off)
70 ns
t
fi
90 ns
E
off
0.33 mJ
R
thJC
0.56 °C/W
R
thCS
TO-220 0.50 °C/W
TO-247 0.21 °C/W
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Inductive Load, T
J
= 25°C
I
C
= 20A, V
GE
= 15V
V
CE
= 300V, R
G
= 5Ω
Note 2
Inductive Load, T
J
= 125°C
I
C
= 20A, V
GE
= 15V
V
CE
= 300V, R
G
= 5Ω
Note 2
Notes
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher V
CE
(Clamp), T
J
or R
G
.
Reverse Diode (SiC)
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
V
F
I
F
= 10A, V
GE
= 0V, Note 1 1.65 2.10 V
T
J
= 125°C 1.80 V
R
thJC
1.10 °C/W
