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IXGA30N60C3C1

P1-P3P4-P6P7-P7
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXGA30N60C3C1 IXGP30N60C3C1
IXGH30N60C3C1
Fig. 1. Output Characteristics @ T
J
= 25ºC
0
5
10
15
20
25
30
35
40
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6
V
CE
- Volts
I
C
- Amperes
V
GE
= 15
V
13
V
7V
9V
11V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
20
40
60
80
100
120
140
160
180
0 2 4 6 8 101214161820
V
CE
- Volts
I
C
-
Amperes
V
GE
= 15V
7V
9V
11V
13V
Fig. 3. Output Characteristics @ T
J
= 125ºC
0
5
10
15
20
25
30
35
40
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
V
CE
- Volts
I
C
- Amperes
V
GE
= 15
V
13
V
11
V
7V
9V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
0.5
0.6
0.7
0.8
0.9
1.0
1.1
25 50 75 100 125 150
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 40A
I
C
= 20A
I
C
= 10A
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
2.5
3.0
3.5
4.0
4.5
5.0
5.5
7 8 9 101112131415
V
GE
- Volts
V
CE
- Volts
I
C
= 40
A
T
J
= 25ºC
10
A
20
A
Fig. 6. Input Admittance
0
10
20
30
40
50
60
70
5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10 10.5 11
V
GE
- Volts
I
C
-
Amperes
T
J
= 125ºC
25ºC
- 40ºC
© 2011 IXYS CORPORATION, All Rights Reserved
IXGA30N60C3C1 IXGP30N60C3C1
IXGH30N60C3C1
Fig. 11. Maximum Transient Thermal Impedance for IGBT
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 7. Transconductance
0
4
8
12
16
20
24
0 1020304050607080
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 10. Reverse-Bias Safe Operating Area
0
10
20
30
40
50
60
70
100 150 200 250 300 350 400 450 500 550 600 650
V
CE
- Volts
I
C
- Amperes
T
J
= 125ºC
R
G
= 5
dv / dt < 10V / ns
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 5 10 15 20 25 30 35 40
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 300V
I
C
= 20A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
ies
C
oes
C
res
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXGA30N60C3C1 IXGP30N60C3C1
IXGH30N60C3C1
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
4 6 8 101214161820
R
G
- Ohms
E
off
- MilliJoules
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 300V
I
C
= 40A
I
C
= 20A
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
20
40
60
80
100
120
140
160
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f i
- Nanoseconds
20
30
40
50
60
70
80
90
t
d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 5
, V
GE
= 15V
V
CE
= 300V
I
C
= 40A, 20A
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
80
100
120
140
160
180
4 6 8 101214161820
R
G
- Ohms
t
f i
- Nanoseconds
40
60
80
100
120
140
t
d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 300V
I
C
= 40A
I
C
= 20A
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
0
0.1
0.2
0.3
0.4
0.5
0.6
10 15 20 25 30 35 40
I
C
- Amperes
E
off
- MilliJoules
0
0.1
0.2
0.3
0.4
0.5
0.6
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 5
,
V
GE
= 15V
V
CE
= 300V
T
J
= 125ºC
T
J
= 25ºC
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
off
- MilliJoules
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 5
,
V
GE
= 15V
V
CE
= 300V
I
C
= 40A
I
C
= 20A
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
0
20
40
60
80
100
120
140
160
180
10 15 20 25 30 35 40
I
C
- Amperes
t
f i
- Nanoseconds
20
30
40
50
60
70
80
90
100
110
t
d
off
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 5
, V
GE
= 15V
V
CE
= 300V
T
J
= 125ºC
T
J
= 25ºC
P1-P3P4-P6P7-P7

IXGA30N60C3C1

Mfr. #:
Buy IXGA30N60C3C1
Manufacturer:
Littelfuse
Description:
IGBT Transistors G-SERIES GENX3SIC IGBT 600V 30A
Lifecycle:
New from this manufacturer.
Delivery:
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