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IXGA30N60C3C1
P1-P3
P4-P6
P7-P7
© 2011 IXYS CORPORATION, All Rights Reserved
IXGA30N60C3C1 IXGP30N60C3C1
IXGH30N60C3C1
IXYS REF: G_30N60C3C1(4D)05-02-11-A
Fig. 19
. Inductiv
e Turn-on Sw
itching Tim
es v
s.
Collec
tor Curre
nt
0
10
20
30
40
50
60
10
15
20
25
30
35
40
I
C
- A
m
p
eres
t
r i
- Nanoseconds
12
14
16
18
20
22
24
t
d
(
on
)
- Nan
osecon
ds
t
r i
t
d(on)
- - - -
R
G
= 5
, V
GE
= 15
V
V
CE
=
300V
T
J
= 125ºC
T
J
= 25º
C
Fi
g.
20. I
nd
ucti
ve T
u
rn
-on
Swi
tchi
ng
T
im
e
s vs.
Junc
tion T
em
pera
ture
15
25
35
45
55
65
75
25
35
45
55
65
75
85
95
10
5
115
125
T
J
- Deg
rees Cen
ti
g
rad
e
t
r i
- Nano
seconds
15
16
17
18
19
20
21
t
d
(
on
)
- Nan
oseco
nds
t
r i
t
d(on)
- - - -
R
G
= 5
, V
GE
= 15V
V
CE
= 30
0V
I
C
= 20A
I
C
= 40A
Fig. 18. Induc
tive
T
urn-on S
witc
hing T
im
es v
s.
Gate Resistance
10
20
30
40
50
60
70
80
90
4
6
8
1
0
1
21
41
6
1
82
0
R
G
- Oh
m
s
t
r i
- Nan
oseco
nds
14
16
18
20
22
24
26
28
30
t
d
(
on
)
- Na
no
secon
ds
t
r i
t
d(on)
- - - -
T
J
= 125ºC,
V
GE
= 15
V
V
CE
= 300V
I
C
= 20
A
I
C
= 40A
Fig. 21
. Forward Curre
nt v
s. Forward V
oltage
0
4
8
12
16
20
00
.
511
.
522
.
53
V
F
- V
ol
ts
I
F
- Amperes
T
J
= 25º
C
T
J
=
125ºC
Fi
g.
22. M
axi
m
um
T
ran
si
ent T
h
erm
al
Im
p
edan
ce fo
r Di
od
e
0.001
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
Puls
e
W
i
dt
h - S
e
c
o
nd
Z
(th)JC
-
ºC
/ W
P1-P3
P4-P6
P7-P7
IXGA30N60C3C1
Mfr. #:
Buy IXGA30N60C3C1
Manufacturer:
Littelfuse
Description:
IGBT Transistors G-SERIES GENX3SIC IGBT 600V 30A
Lifecycle:
New from this manufacturer.
Delivery:
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IXGH30N60C3C1
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