OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

IRF7946TRPbF

P1-P3P4-P6P7-P9P10-P12
DirectFET
®
Power MOSFET
Fig 1. Typical On-Resistance vs. Gate Voltage
Fig 2. Maximum Drain Current vs. Case Temperature
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l RoHS Compliant Containing no Lead, no Bromide
and no Halogen
Applications
l Brushed Motor drive applications
l BLDC Motor drive applications
l Battery powered circuits
l Half-bridge and full-bridge topologies
l Synchronous rectifier applications
l Resonant mode power supplies
l OR-ing and redundant power switches
l DC/DC and AC/DC converters
l DC/AC Inverters
DirectFET ISOMETRIC
MX
25 50 75 100 125 150
T
C
, Case Temperature (°C)
0
50
100
150
200
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
Limited By Package
DD
G
S
S
V
DSS
40V
R
DS(on)
typ.
1.1m
Ω
max. 1.4m
Ω
I
D
(Silicon Limited)
198A
I
D
(Package Limited)
90A
4 6 8 10 12 14 16 18 20
V
GS,
Gate -to -Source Voltage (V)
0.0
2.0
4.0
6.0
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
m
Ω
)
I
D
= 90A
T
J
= 25°C
T
J
= 125°C
StrongIRFET
IRF7946PbF
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 25, 2014
Form Quantity
IRF7946TRPbF DirectFET MX Tape and Reel 4800 IRF7946TRPbF
Complete Part NumberBase part number Package Type
Standard Pack
2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 25, 2014
IRF7946PbF
Notes:
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Used double sided cooling , mounting pad with large heatsink.
T
C
measured with thermocouple mounted to top (Drain) of part.
Surface mounted on 1 in. square Cu
(still air).
Mounted to a PCB with
small clip heatsink (still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
Absolute Maximum Ratings
Symbol Parameter Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
Pulsed Drain Current
P
D
@T
C
= 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
T
J
Operating Junction and
T
STG
Storage Temperature Range
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
mJ
E
AS (Thermally limited)
Single Pulse Avalanche Energy
I
AR
Avalanche Current
A
E
AR
Repetitive Avalanche Energy
mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θ
JA
Junction-to-Ambient ––– 45
R
θ
JA
Junction-to-Ambient 12.5 –––
R
θ
JA
Junction-to-Ambient 20 ––– °C/W
R
θ
Junction-to-Case
–––
1.3
R
θ
JA-PCB
Junction-to-PCB Mounted
1.0
–––
96
Max.
198
125
793
200
-55 to + 150
A
°C
85
See Fig. 14, 15, 22a, 22b
± 20
0.77
Static @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage 40 ––– ––– V
Δ
V
(BR)DSS
/
Δ
T
J
Breakdown Voltage Temp. Coefficient ––– 0.03 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 1.1 1.4
mΩ
1.7 –––
mΩ
V
GS(th)
Gate Threshold Voltage 2.2 3.0 3.9 V
I
DSS
Drain-to-Source Leakage Current ––– ––– 1.0 μA
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
R
G
Internal Gate Resistance ––– 0.67 –––
Ω
V
GS
= 20V
V
GS
= -20V
V
DS
= 40V, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
V
GS
= 6.0V, I
D
= 72A
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1.0mA
V
GS
= 10V, I
D
= 90A
V
DS
= V
GS
, I
D
= 150μA
3 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 25, 2014
IRF7946PbF
S
D
G
Notes:
Calculated continuous current based on maximum allowable
junction temperature. Package limit is 90A.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.021mH
R
G
= 50Ω, I
AS
= 90A, V
GS
=10V.
I
SD
≤ 90A, di/dt ≤ 1135A/μs, V
DD
≤ V
(BR)DSS
, T
J
≤ 150°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
R
θ
is measured at T
J
approximately 90°C.
Limited by T
Jmax
starting
T
J
= 25°C, L= 1mH, R
G
= 50Ω, I
AS
= 20A, V
GS
=10V
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
gfs Forward Transconductance 91 ––– ––– S
Q
g
Total Gate Charge ––– 141 212 nC
Q
gs
Gate-to-Source Charge ––– 36 –––
Q
gd
Gate-to-Drain ("Miller") Charge ––– 44 –––
Q
syn c
Total Gate Charge Sync. (Q
g
- Q
gd
) ––– 97 –––
t
d(on)
Turn-On Delay Time ––– 20 ––– ns
t
r
Rise Time ––– 49 –––
t
d(off)
Turn-Off Delay Time ––– 54 –––
t
f
Fall Time ––– 41 –––
C
iss
Input Capacitance ––– 6852 ––– pF
C
oss
Output Capacitance ––– 1046 –––
C
rss
Reverse Transfer Capacitance ––– 735 –––
C
oss
eff. (ER)
Effective Output Capacitance (Energy Related)
––– 1307 –––
C
oss
eff. (TR)
Effective Output Capacitance (Time Related)
––– 1465 –––
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– –––
96
A
(Body Diode)
I
SM
Pulsed Source Current ––– ––– 793 A
(Body Diode)
V
SD
Diode Forward Voltage ––– 0.75 1.2 V
dv/dt
Peak Diode Rec overy
––– 1.6 ––– V/ns
t
rr
Reverse Recovery Time ––– 49 ––– ns T
J
= 25°C V
R
= 34V,
––– 50 ––– T
J
= 125°C I
F
= 90A
Q
rr
Reverse Recovery Charge ––– 74 ––– nC T
J
= 25°C
di/dt = 100A/μs
––– 73 ––– T
J
= 125°C
I
RRM
Reverse Recovery Current ––– 2.6 ––– A T
J
= 25°C
T
J
= 175°C, I
S
= 90A, V
DS
= 40V
I
D
= 30A
R
G
= 2.7Ω
V
GS
= 10V
V
DD
= 20V
T
J
= 25°C, I
S
= 90A, V
GS
= 0V
integral reverse
p-n junction diode.
MOSFET symbol
showing the
Conditions
Conditions
V
DS
= 10V, I
D
= 90A
V
DS
=20V
ƒ = 1.0 MHz
I
D
= 90A, V
DS
=0V, V
GS
= 10V
V
GS
= 0V, V
DS
= 0V to 32V
V
GS
= 0V, V
DS
= 0V to 32V
I
D
= 90A
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
P1-P3P4-P6P7-P9P10-P12

IRF7946TRPbF

Mfr. #:
Buy IRF7946TRPbF
Manufacturer:
Infineon / IR
Description:
MOSFET 40V 198A 1.5mOhm 141nC StrongIRFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet