OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

IRF7946TRPbF

P1-P3P4-P6P7-P9P10-P12
7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 25, 2014
IRF7946PbF
Fig. 18 - Typical Recovery Current vs. di
f
/dt
Fig 17. Threshold Voltage vs. Temperature
Fig. 20 - Typical Stored Charge vs. di
f
/dtFig. 19 - Typical Recovery Current vs. di
f
/dt
Fig. 21 - Typical Stored Charge vs. di
f
/dt
-75 -50 -25 0 25 50 75 100 125 150
T
J
, Temperature ( °C )
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
G
S
(
t
h
)
,
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 150μA
I
D
= 1.0mA
I
D
= 1.0A
0 200 400 600 800 1000
di
F
/dt (A/μs)
0
2
4
6
8
10
12
14
16
I
R
R
M
(
A
)
I
F
= 54A
V
R
= 34V
T
J
= 25°C
T
J
= 125°C
0 200 400 600 800 1000
di
F
/dt (A/μs)
0
2
4
6
8
10
12
14
16
I
R
R
M
(
A
)
I
F
= 90A
V
R
= 34V
T
J
= 25°C
T
J
= 125°C
0 200 400 600 800 1000
di
F
/dt (A/μs)
50
100
150
200
250
300
350
Q
R
R
(
n
C
)
I
F
= 54A
V
R
= 34V
T
J
= 25°C
T
J
= 125°C
0 200 400 600 800 1000
di
F
/dt (A/μs)
50
100
150
200
250
300
350
400
Q
R
R
(
n
C
)
I
F
= 90A
V
R
= 34V
T
J
= 25°C
T
J
= 125°C
8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 25, 2014
IRF7946PbF
Fig 23a. Switching Time Test Circuit Fig 23b. Switching Time Waveforms
Fig 22b. Unclamped Inductive Waveforms
Fig 22a. Unclamped Inductive Test Circuit
t
p
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
V
GS
Fig 24a. Gate Charge Test Circuit
Fig 24b. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2 Qgd Qgodr
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET
®
Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple ≤ 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P. W .
Period
* V
GS
= 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
R
G
V
DD
• dv/dt controlled by R
G
• Driver same type as D.U.T.
• I
SD
controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
Inductor Current
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3μF
50KΩ
.2μF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
V
DS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
V
GS
9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 25, 2014
IRF7946PbF
DirectFET
®
Board Footprint, MX Outline
(Medium Size Can, X-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
G
S
G=GATE
D=DRAIN
S=SOURCE
S
D
DD
D
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
P1-P3P4-P6P7-P9P10-P12

IRF7946TRPbF

Mfr. #:
Buy IRF7946TRPbF
Manufacturer:
Infineon / IR
Description:
MOSFET 40V 198A 1.5mOhm 141nC StrongIRFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet