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IRF7946TRPbF

P1-P3P4-P6P7-P9P10-P12
4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 25, 2014
IRF7946PbF
Fig 3. Typical Output Characteristics
Fig 5. Typical Transfer Characteristics
Fig 6. Normalized On-Resistance vs. Temperature
Fig 4. Typical Output Characteristics
Fig 8. Typical Gate Charge vs. Gate-to-Source VoltageFig 7. Typical Capacitance vs. Drain-to-Source Voltage
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
≤
60μs PULSE WIDTH
Tj = 25°C
4.5V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
4.5V
≤
60μs PULSE WIDTH
Tj = 150°C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
2 3 4 5 6 7 8
V
GS
, Gate-to-Source Voltage (V)
1.0
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 150°C
V
DS
= 10V
≤60μs PULSE WIDTH
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
0.6
0.80.8
1.01.0
1.21.2
1.41.4
1.61.6
1.8
0.6
0.8
1.0
1.2
1.4
1.6
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 90A
V
GS
= 10V
1 10 100
V
DS
, Drain-to-Source Voltage (V)
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
0 20 40 60 80 100 120 140 160 180
Q
G
,
Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 32V
V
DS
= 20V
I
D
= 90A
5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 25, 2014
IRF7946PbF
Fig 10. Maximum Safe Operating Area
Fig 11. Drain-to-Source Breakdown Voltage
Fig 9. Typical Source-Drain Diode
Forward Voltage
Fig 12. Typical C
OSS
Stored Energy
Fig 13. Typical On-Resistance vs. Drain Current
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V
SD
, Source-to-Drain Voltage (V)
1.0
10
100
1000
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 150°C
V
GS
= 0V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
10000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
1msec
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
100μsec
DC
Limited by
Package
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
J
, Temperature ( °C )
40
41
42
43
44
45
46
47
48
V
(
B
R
)
D
S
S
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
B
r
e
a
k
d
o
w
n
V
o
l
t
a
g
e
(
V
)
Id = 1.0mA
0 5 10 15 20 25 30 35 40 45
V
DS,
Drain-to-Source Voltage (V)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
E
n
e
r
g
y
(
μ
J
)
V
DS
= 0V to 32V
0 200 400 600 800 1000
I
D
, Drain Current (A)
0.0
2.0
4.0
6.0
8.0
10.0
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
m
Ω
)
V
GS
= 5.5V
V
GS
= 6.0V
V
GS
= 7.0V
V
GS
= 8.0V
V
GS
=10V
6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 25, 2014
IRF7946PbF
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 15. Typical Avalanche Current vs.Pulsewidth
Fig 16. Maximum Avalanche Energy vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax
. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I
av
= Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed T
jmax
(assumed as
25°C in Figure 14, 15).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 13)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) = DT/ Z
thJC
I
av
=
2DT/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
1E-006 1E-005 0.0001 0.001 0.01 0.1
t
1
, Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
°
C
/
W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
0.1
1
10
100
1000
A
v
a
l
a
n
c
h
e
C
u
r
r
e
n
t
(
A
)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 125°C.
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 125°C and
Tstart =25°C (Single Pulse)
25 50 75 100 125 150
Starting T
J
, Junction Temperature (°C)
0
10
20
30
40
50
60
70
80
90
E
A
R
,
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
TOP Single Pulse
BOTTOM 1.0% Duty Cycle
I
D
= 90A
P1-P3P4-P6P7-P9P10-P12

IRF7946TRPbF

Mfr. #:
Buy IRF7946TRPbF
Manufacturer:
Infineon / IR
Description:
MOSFET 40V 198A 1.5mOhm 141nC StrongIRFET
Lifecycle:
New from this manufacturer.
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