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Document Number: 70049
S09-2561-Rev. I, 30-Nov-09
Vishay Siliconix
DG401, DG403, DG405
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
e. Guaranteed by design, not subject to production test.
f. V
IN
= input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS
a
Parameter Symbol
Test Conditions
Unless Specified
V+ = 15 V, V- = - 15 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
f
Temp.
b
Typ.
c
D Suffix
- 40 °C to 85 °C
Unit Min.
d
Max.
d
Analog Switch
Analog Signal Range
e
V
ANALOG
Full - 15 15 V
Drain-Source
On-Resistance
R
DS(on)
I
S
= - 10 mA, V
D
= ± 10 V
V+ = 13.5 V, V- = - 13.5 V
Room
Full
30 45
55
Ω
Δ Drain-Source
On-Resistance
ΔR
DS(on)
I
S
= - 10 mA, V
D
= ± 5 V, 0 V
V+ = 16.5 V, V- = - 16.5 V
Room
Full
33
5
Switch Off Leakage Current
I
S(off)
V+ = 16.5 V, V- = - 16.5 V
V
D
= ± 15.5 V, V
S
= ± 15.5 V
Room
Hot
- 0.01 - 0.5
- 5
0.5
5
nA
I
D(off)
Room
Hot
- 0.01 - 0.5
- 5
0.5
5
Channel On Leakage Current
I
D(on)
V+ = 16.5 V, V- = - 16.5 V
V
S
= V
D
= ± 15.5 V
Room
Hot
- 0.04 - 1
- 10
1
10
Digital Control
Input Current V
IN
Low I
IL
V
IN
under test = 0.8 V
All Other = 2.4 V
Full 0.005 - 1 1
µA
Input Current V
IN
High I
IH
V
IN
under test = 2.4 V
All Other = 0.8 V
Full 0.005 - 1 1
Dynamic Characteristics
Tur n - O n T i m e
t
ON
R
L
= 300 Ω, C
L
= 35 pF
See Figure 2
Room 75 150
ns
Turn-Off Time
t
OFF
Room 30 100
Break-Before-Make
Time Delay (DG403)
t
D
R
L
= 300 Ω, C
L
= 35 pF
Room 35 5
Charge Injection Q
C
L
= 10 nF
V
gen
= 0 V, R
gen
= 0 Ω
Room 60 pC
Off Isolation Reject Ratio OIRR
R
L
= 100 Ω, C
L
= 5 pF
f = 1 MHz
Room 72
dB
Channel-to-Channel Crosstalk
X
TA LK
Room 90
Source Off Capacitance
C
S(off)
f = 1 MHz, V
S
= 0 V
Room 12
pFDrain Off Capacitance
C
D(off)
Room 12
Channel On Capacitance
C
D
, C
S(on)
Room 39
Power Supplies
Positive Supply Current I+
V+ = 16.5 V, V- = - 16.5 V
V
IN
= 0 or 5 V
Room
Full
0.01 1
5
µA
Negative Supply Current I-
Room
Full
- 0.01 - 1
- 5
Logic Supply Current
I
L
Room
Full
0.01 1
5
Ground Current
I
GND
Room
Full
- 0.01 - 1
- 5
