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IRF7350PBF

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
HEXFET
®
Power MOSFET
Description
6/10/04
www.irf.com 1
IRF7350PbF
SO-8
Symbol Parameter Typ. Max. Units
R
θJL
Junction-to-Drain Lead ––– 20
R
θJA
Junction-to-Ambient ––– 62.5 °C/W
Thermal Resistance
N-Ch P-Ch
V
DSS
100V -100V
R
DS(on)
0.21Ω 0.48Ω
D1
N-CHANNEL MOSFET
P-CHANNEL MOSFET
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
These dual N and P channel HEXFET
®
power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
®
power MOSFETs are
well known for, provides the designer with an extremely efficient and reliable
device for use in DC motor drives and load management applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety
of power applications. With these improvements, multiple devices can be
used in an application with dramatically reduced board space. The package
is designed for vapor phase, infra red, or wave soldering techniques.
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Available in Tape and Reel
l Lead-Free
Parameter
Units
A
Absolute Maximum Ratings
Max.
N-Channel P-Channel
V
DS
Drain-to-Source Voltage 100 -100
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V 2.1 -1.5
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V 1.7 -1.2
I
DM
Pulsed Drain Current 8.4 -6.0
P
D
@T
A
= 25°C Power Dissipation 2.0 W
Linear Derating Factor 0.016 W/°C
E
AS
Single Pulse Avalanche Energy 35 51 mJ
V
GS
Gate-to-Source Voltage ± 20 ± 20 V
dv/dt Peak Diode Recovery dv/dt 4.0 4.3 V/ns
T
J,
T
STG
Junction and Storage Temperature Range
-55 to + 150
°C
PD - 95367
IRF7350PbF
2 www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Surface mounted on 1 in square Cu board
N channel: Starting T
J
= 25°C, L = 4.0mH, R
G
= 25Ω, I
AS
= 4.2A
P channel: Starting T
J
= 25°C, L = 11mH, R
G
= 25Ω, I
AS
= -3.0A
Parameter Min. Typ. Max. Units Conditions
N-Ch 100 — — V
GS
= 0V, I
D
= 250µA
P-Ch -100 — — V
GS
= 0V, I
D
= -250µA
N-Ch — 0.12 — Reference to 25°C, I
D
= 1mA
P-Ch — -0.11 — Reference to 25°C, I
D
= -1mA
N-Ch 2.0 — 4.0 V
DS
= V
GS
, I
D
= 250µA
P-Ch -2.0 — -4.0 V
DS
= V
GS
, I
D
= -250µA
N-Ch 2.4 — — V
DS
= 50V, I
D
= 2.1A
P-Ch 1.1 — — V
DS
= -50V, I
D
= -1.5A
N-Ch — — 25 V
DS
= 100V, V
GS
= 0V
P-Ch — — -25 V
DS
= -100V, V
GS
= 0V
N-Ch — — 250 V
DS
= 80 V, V
GS
= 0V, T
J
= 70°C
P-Ch — — -250 V
DS
= -80V, V
GS
= 0V, T
J
= 70°C
I
GSS
Gate-to-Source Forward Leakage N-P –– — ±100 V
GS
= ± 20V
N-Ch — 19 28
P-Ch — 21 31
N-Ch — 3.0 4.5
P-Ch — 3.4 5.1
N-Ch — 8.8 13
P-Ch — 10 16
N-Ch — 6.7 —
P-Ch — 25 —
N-Ch — 11 —
P-Ch — 13 —
N-Ch — 35 —
P-Ch — 30 —
N-Ch — 20 —
P-Ch — 40 —
N-Ch — 380 —
P-Ch — 360 —
N-Ch — 100 —
P-Ch — 110 —
N-Ch — 54 —
P-Ch — 65 —
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(ON)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
I
DSS
Drain-to-Source Leakage Current
Q
g
Total Gate Charge
Q
gs
Gate-to-Source Charge
Q
gd
Gate-to-Drain ("Miller") Charge
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
V/°C
Ω
V
S
µA
nC
ns
pF
N-Channel
I
D
= 2.1A, V
DS
= 80V, V
GS
= 10V
P-Channel
I
D
= -1.5A, V
DS
= -80V, V
GS
= -10V
N-Channel
V
DD
= 50V, I
D
= 1.0A, R
G
= 22Ω,
R
D
= 50Ω, V
GS
= 10V
P-Channel
V
DD
= -50V, I
D
= -1.0A, R
G
= 22Ω,
R
D
= 50Ω, V
GS
= -10V
P-Channel
V
GS
= 0V, V
DS
= -25V, ƒ = 1.0MHz
P-Ch
Parameter Min. Typ. Max. Units Conditions
N-Ch — — 1.8
P-Ch — — -1.4
N-Ch — — 8.4
P-Ch — — -6.0
N-Ch — — 1.3 T
J
= 25°C, I
S
= 1.8A, V
GS
= 0V
P-Ch — — -1.6 T
J
= 25°C, I
S
= -1.4A, V
GS
= 0V
N-Ch — 72 110
P-Ch — 77 120
N-Ch — 205 310
P-Ch — 240 360
Source-Drain Ratings and Characteristics
I
S
Continuous Source Current (Body Diode)
I
SM
Pulsed Source Current (Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
A
V
ns
nC
N-Channel
T
J
= 25°C, I
F
= 1.8A, di/dt = 100A/µs
P-Channel
T
J
= 25°C, I
F
= -1.4A, di/dt = -100A/µs
N-Ch
—
V
GS
= 10V, I
D
= 2.1A
0.21
—
—
— 0.48
V
GS
= -10V, I
D
= -1.5A
N-Channel
V
GS
= 0V, V
DS
= 25V, ƒ = 1.0MHz
IRF7350PbF
www.irf.com 3
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
4.0V
20µs PULSE WIDTH
Tj = 25°C
VGS
TOP 15V
10V
7.0V
6.0V
5.5V
5.0V
4.5V
BOTTOM 4.0V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
4.0V
20µs PULSE WIDTH
Tj = 150°C
VGS
TOP 15V
10V
7.0V
6.0V
5.5V
5.0V
4.5V
BOTTOM 4.0V
3.0 4.5 6.0 7.5 9.0
V
GS
, Gate-to-Source Voltage (V)
0.01
0.10
1.00
10.00
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
Α
)
T
J
= 25°C
T
J
= 150°C
V
DS
= 15V
20µs PULSE WIDTH
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
2.1A
N-CHANNEL
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

IRF7350PBF

Mfr. #:
Buy IRF7350PBF
Manufacturer:
Infineon / IR
Description:
MOSFET 100V DUAL N- & P- CH HEXFET
Lifecycle:
New from this manufacturer.
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