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IRF7350PBF

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
IRF7350PbF
4 www.irf.com
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
1 10 100
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
10000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
0 4 8 12 16 20
0
2
5
7
10
12
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D
2.1A
V = 20V
DS
V = 50V
DS
V = 80V
DS
0.0 0.5 1.0 1.5
V
SD
, Source-toDrain Voltage (V)
0.10
1.00
10.00
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 150°C
V
GS
= 0V
1 10 100 1000
V
DS
, Drain-toSource Voltage (V)
0.1
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25°C
Tj = 150°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
100µsec
N-CHANNEL
IRF7350PbF
www.irf.com 5
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
V
GS
+
-
V
DD
25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
J DM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
N-CHANNEL
IRF7350PbF
6 www.irf.com
Fig 13. Typical On-Resistance Vs. Drain
Current
Fig 12. Typical On-Resistance Vs. Gate
Voltage
Fig 14. Typical Threshold Voltage Vs.
Junction Temperature
Fig 15. Typical Power Vs. Time
4.5 6.0 7.5 9.0 10.5 12.0 13.5 15.0
V
GS,
Gate -to -Source Voltage (V)
0.00
0.10
0.20
0.30
0.40
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
Ω
)
I
D
= 2.1A
0246810
I
D
, Drain Current (A)
0.15
0.16
0.17
0.18
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
Ω
)
V
GS
= 10V
-75 -50 -25 0 25 50 75 100 125 150
T
J
, Temperature ( °C )
2.0
2.5
3.0
3.5
4.0
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 250µA
1.00 10.00 100.00 1000.00
Time (sec)
0
10
20
30
40
50
60
70
P
o
w
e
r
(
W
)
N-CHANNEL
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

IRF7350PBF

Mfr. #:
Buy IRF7350PBF
Manufacturer:
Infineon / IR
Description:
MOSFET 100V DUAL N- & P- CH HEXFET
Lifecycle:
New from this manufacturer.
Delivery:
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