IRF7350PbF
www.irf.com 7
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3µF
50K
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
V
GS
Fig 17. Gate Charge Test Circuit
Fig 18. Basic Gate Charge Waveform
Fig 16a. Maximum Avalanche Energy
Vs. Drain Current
Fig 16d. Unclamped Inductive Waveforms
Fig 16c. Unclamped Inductive Test Circuit
t
p
V
(BR)DSS
I
AS
R
G
I
AS
0.01
t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
25 50 75 100 125 150
0
20
40
60
80
100
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
I
D
TOP
BOTTOM
1.9A
3.4A
4.2A
N-CHANNEL
IRF7350PbF
8 www.irf.com
Fig 19. Typical Avalanche Current Vs.Pulsewidth
Fig 20. Maximum Avalanche Energy
Vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
jmax
. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. P
D (ave)
= Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. I
av
= Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed
T
jmax
(assumed as 25°C in Figure 15, 16).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see figure 11)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) = DT/ Z
thJC
I
av
=
2DT/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
tav (sec)
0.001
0.01
0.1
1
10
A
v
a
l
a
n
c
h
e
C
u
r
r
e
n
t
(
A
)
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming
Tj = 25°C due to
avalanche losses
0.05
Duty Cycle = Single Pulse
0.10
0.01
N-CHANNEL
25 50 75 100 125 150
Starting T
J
, Junction Temperature (°C)
0
10
20
30
40
E
A
R
,
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
TOP Single Pulse
BOTTOM 10% Duty Cycle
I
D
= 4.2A
IRF7350PbF
www.irf.com 9
Fig 23. Typical Transfer Characteristics
Fig 22. Typical Output Characteristics
Fig 21. Typical Output Characteristics
Fig 24. Normalized On-Resistance
Vs. Temperature
P-CHANNEL
0.1 1 10 100
-V
DS
, Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
10
100
-
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
-4.0V
20µs PULSE WIDTH
Tj = 25°C
VGS
TOP -15V
-10V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
BOTTOM -4.0V
0.1 1 10 100
-V
DS
, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
-
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
-4.0V
20µs PULSE WIDTH
Tj = 150°C
VGS
TOP -15V
-10V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
BOTTOM -4.0V
4.0 6.0 8.0 10.0
-V
GS
, Gate-to-Source Voltage (V)
0.01
0.10
1.00
10.00
-
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
Α
)
T
J
= 25°C
T
J
= 150°C
V
DS
= -25V
20µs PULSE WIDTH
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-10V
-1.5A

IRF7350PBF

Mfr. #:
Manufacturer:
Infineon / IR
Description:
MOSFET 100V DUAL N- & P- CH HEXFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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