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PSMN034-100PS,127

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
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Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
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use http://www.nexperia.com
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Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
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Team Nexperia
PSMN034-100PS
N-channel 100 V 34.5 mΩ standard level MOSFET in TO220.
Rev. 02 — 1 March 2010 Objective data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for standard level gate drive
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 100 V
I
D
drain current T
mb
=25°C; V
GS
=10V;
see Figure 1
--32A
P
tot
total power
dissipation
T
mb
= 25 °C; see Figure 2 --86W
T
j
junction temperature -55 - 175 °C
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
V
GS
=10V; T
j(init)
=25°C;
I
D
=32A; V
sup
≤ 100 V;
unclamped; R
GS
=50Ω
--42mJ
Dynamic characteristics
Q
GD
gate-drain charge V
GS
=10V; I
D
=15A;
V
DS
= 50 V; see Figure 12
and 13
-6.9-nC
Q
G(tot)
total gate charge - 23.8 - nC
Static characteristics
R
DSon
drain-source
on-state resistance
V
GS
=10V; I
D
=15A;
T
j
= 100 °C; see Figure 11
--62mΩ
V
GS
=10V; I
D
=15A;
T
j
= 25 °C; see Figure 16
- 29.3 34.5 mΩ
PSMN034-100PS_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Objective data sheet Rev. 02 — 1 March 2010 2 of 15
NXP Semiconductors
PSMN034-100PS
N-channel 100 V 34.5 mΩ standard level MOSFET in TO220.
2. Pinning information
3. Ordering information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1G gate
SOT78 (TO-220AB)
2D drain
3S source
mb D mounting base; connected to
drain
12
mb
3
S
D
G
m
bb076
Table 3. Ordering information
Type number Package
Name Description Version
PSMN034-100PS TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB
SOT78
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

PSMN034-100PS,127

Mfr. #:
Buy PSMN034-100PS,127
Manufacturer:
Nexperia
Description:
MOSFET N-CH 100V STD LEVEL MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
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